Research Conducted at Seoul National University Has Updated Our Knowledge about Applied Physics (Direct Observation of Lateral Hole Migration In the Charge Trap Layer of an Inhomogeneous Flash Memory Device)

Media coverage

• Title	Research Conducted at Seoul National University Has Updated Our Knowledge about Applied Physics (Direct Observation of Lateral Hole Migration In the Charge Trap Layer of an Inhomogeneous Flash Memory Device)
  Media name/outlet	South Korea Daily Report
  Country/Territory	United States
  Date	26.04.13
  Persons	Jeong-Hwan Hwang