Skip to main navigation Skip to search Skip to main content

Samsung Electronics Co Ltd and Seoul National University R&DB Foundation Submit Patent Application for Method of Forming Thin Film of Magnetic Tunnel Junction, Method of Manufacturing Memory Device Using the Same, and Memory Device Thereby

Press/Media

Period2026.01.8

Media coverage

1

Media coverage

  • TitleSamsung Electronics Co Ltd and Seoul National University R&DB Foundation Submit Patent Application for Method of Forming Thin Film of Magnetic Tunnel Junction, Method of Manufacturing Memory Device Using the Same, and Memory Device Thereby
    Media name/outletGlobal IP News. Semiconductor Patent News
    Country/TerritoryIndia
    Date26.01.8
    PersonsJoonwoo Lee
View all 1
View less