Seoul National University R&DB Foundation Granted United States Patent for Two-dimensional Electron Gas at Interface Between BaSnO3 and LaInO3

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Period2025.06.27

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  • TitleSeoul National University R&DB Foundation Granted United States Patent for Two-dimensional Electron Gas at Interface Between BaSnO3 and LaInO3
    Media name/outletGlobal IP News. Information Technology Patent News
    Country/TerritoryIndia
    Date25.06.27
    PersonsYoungjun Mo
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