1 / f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress

Young Joo Song; Jung Wook Lim; Bongki Mheen; Sang Hoon Kim; Hyun Chul Bae; Jin Young Kang; Jeong Hoon Kim; Jong In Song; Kyung Wan Park; Kyu Hwan Shim

doi:10.1109/TED.2003.812477

1 / f noise in Si_0.8Ge_0.2 pMOSFETs under Fowler-Nordheim stress

Young Joo Song^*
, Jung Wook Lim
, Bongki Mheen
, Sang Hoon Kim
, Hyun Chul Bae
, Jin Young Kang
, Jeong Hoon Kim
, Jong In Song
, Kyung Wan Park
, Kyu Hwan Shim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Review article › peer-review

12 Scopus citations

Abstract

The 1 / f noise in Si_0.8Ge_0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si_0.8Ge_0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (N_ot) near the Fermi level (E_F) in the device. However, all samples in this study, including the Si control and the Si_0.2Ge_0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 Å, revealed almost identical relative changes in 1 / f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in N_ot at the E_F in the devices during F-N stress.

Original language	English
Pages (from-to)	1152-1156
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	4
DOIs	https://doi.org/10.1109/TED.2003.812477
State	Published - 2003.04

Keywords

1 / f Noise
Fowler-Nordheim stress
Oxide trap density
SiGe pMOSFET

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10.1109/TED.2003.812477

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@article{75c89e82c3df4a999c213d9de8f678d0,

title = "1 / f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress",

abstract = "The 1 / f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.2Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 {\AA}, revealed almost identical relative changes in 1 / f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.",

keywords = "1 / f Noise, Fowler-Nordheim stress, Oxide trap density, SiGe pMOSFET",

author = "Song, \{Young Joo\} and Lim, \{Jung Wook\} and Bongki Mheen and Kim, \{Sang Hoon\} and Bae, \{Hyun Chul\} and Kang, \{Jin Young\} and Kim, \{Jeong Hoon\} and Song, \{Jong In\} and Park, \{Kyung Wan\} and Shim, \{Kyu Hwan\}",

year = "2003",

month = apr,

doi = "10.1109/TED.2003.812477",

language = "English",

volume = "50",

pages = "1152--1156",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

number = "4",

}

TY - JOUR

T1 - 1 / f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress

AU - Song, Young Joo

AU - Lim, Jung Wook

AU - Mheen, Bongki

AU - Kim, Sang Hoon

AU - Bae, Hyun Chul

AU - Kang, Jin Young

AU - Kim, Jeong Hoon

AU - Song, Jong In

AU - Park, Kyung Wan

AU - Shim, Kyu Hwan

PY - 2003/4

Y1 - 2003/4

N2 - The 1 / f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.2Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 Å, revealed almost identical relative changes in 1 / f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.

AB - The 1 / f noise in Si0.8Ge0.2 pMOSFETs was found to be lower than in all-silicon (Si) pMOSFETs, before and after Fowler-Nordheim (F-N) stress. The minimum noise in the Si0.8Ge0.2 pMOSFET occurred at the thinnest unconsumed Si-cap of approximately 2 nm, because of the reduced-oxide trap density (Not) near the Fermi level (EF) in the device. However, all samples in this study, including the Si control and the Si0.2Ge0.2 pMOSFETs with different unconsumed Si-cap thicknesses of 21-64 Å, revealed almost identical relative changes in 1 / f noise due to the stress, despite the relatively wide range of initial noise values. This suggests identical relative changes in Not at the EF in the devices during F-N stress.

KW - 1 / f Noise

KW - Fowler-Nordheim stress

KW - Oxide trap density

KW - SiGe pMOSFET

UR - https://www.scopus.com/pages/publications/0037480716

U2 - 10.1109/TED.2003.812477

DO - 10.1109/TED.2003.812477

M3 - Review article

AN - SCOPUS:0037480716

SN - 0018-9383

VL - 50

SP - 1152

EP - 1156

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

1 / f noise in Si_0.8Ge_0.2 pMOSFETs under Fowler-Nordheim stress

Abstract

Keywords

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