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1.55 μm InAs quantum dot DFB lasers

  • Jin Soo Kim
  • , Ho Sang Kwack
  • , Byung Seok Choi
  • , Eundeuk Sim
  • , Chul Wook Lee
  • , Dae Kon Oh
  • , Cheul Ro Lee
  • Electronics and Telecommunications Research Institute

Research output: Contribution to conferenceConference paperpeer-review

Abstract

For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 um were fabricated. Single-mode lasing operation around the wavelength of 1.56 μm was successfully achieved under the pulsed and continuous-wave (CW) modes at room temperature. The lasing operation was also observed up to 70 °C, which is the first observation on the single-mode lasing around 1.55 μm. The characteristic temperatures calculated from the temperature dependence of the threshold current density were 121.8 K from room temperature to 45 °C and 74.2 K up to 70 °C, respectively.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages332-333
Number of pages2
DOIs
StatePublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006.10.222006.10.25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Conference

Conference2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/TerritoryKorea, Republic of
CityGyeongju
Period06.10.2206.10.25

Keywords

  • 1.55μm
  • Characteirstic temperature
  • Laser
  • Quantum dot
  • Single-mode operation

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum

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