20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Moongyu Jang; Cheljong Choi; Seongjae Lee

doi:10.1063/1.3025726

20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Moongyu Jang^*
, Cheljong Choi
, Seongjae Lee

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 10⁶) with low leakage current less than 10^-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively.

Original language	English
Article number	192112
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.3025726
State	Published - 2008

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.3025726

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@article{28a4d33cbe6b4015be7d98a4487851df,

title = "20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors",

abstract = "20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively.",

author = "Moongyu Jang and Cheljong Choi and Seongjae Lee",

year = "2008",

doi = "10.1063/1.3025726",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "19",

}

TY - JOUR

T1 - 20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

AU - Jang, Moongyu

AU - Choi, Cheljong

AU - Lee, Seongjae

PY - 2008

Y1 - 2008

N2 - 20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively.

AB - 20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively.

UR - https://www.scopus.com/pages/publications/56249089326

U2 - 10.1063/1.3025726

DO - 10.1063/1.3025726

M3 - Journal article

AN - SCOPUS:56249089326

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192112

ER -

20-nm-gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Abstract

Quacquarelli Symonds(QS) Subject Topics

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