Abstract
In this paper, a low-power low-noise complementary metal-oxide semiconductor (CMOS) receiver RF front-end (RFFE) that employs a current-reuse Q-boosted resistive feedback low-noise amplifier (RFLNA) is proposed for 401 to 406 MHz medical device radio-communication service band IoT applications. By employing a series RLC input matching network, the proposed RFLNA has the advantages of both the conventional RFLNA and the inductively degenerated common-source LNA without using large on-chip spiral inductors at the sources of the main transistors. The proposed active mixer utilizes a current-reuse transconductor, in which a p-channel metal-oxide semiconductor (PMOS) transistor performs a current-bleeding function to reduce direct current (DC) and flicker noise in the switching stage of the active mixer. The proposed receiver RFFE is implemented in a 65-nm CMOS process and achieves a voltage gain of 30.9 dB, noise figure of 4.1 dB, S11 of less than −10 dB, and IIP3 of −22.9 dBm. It operates at a supply voltage of 1 V with bias currents of 360 μA. The active die area is 0.4 mm × 0.35 mm.
| Original language | English |
|---|---|
| Pages (from-to) | 502-511 |
| Number of pages | 10 |
| Journal | International Journal of Circuit Theory and Applications |
| Volume | 48 |
| Issue number | 4 |
| DOIs | |
| State | Published - 2020.04.1 |
Keywords
- biomedical
- CMOS
- current-reuse
- implant
- IoT
- low-noise amplifier
- MedRadio
- MICS
- mixer
- Q-factor
- receiver
- resistive feedback LNA
- series RLC matching
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Computer Science & Information Systems
- Mathematics
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Data Science
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