@inproceedings{845e0302bd0740fa879a23653cda02c2,
title = "A 50-110 GHz ohmic contact RF MEMS silicon switch with high isolation",
abstract = "This paper presents the new concept of RF MEMS silicon contact switch and its verification for high isolation at 50-110 GHz. A high isolation is achieved by locating the floating top contact electrode 30 μm apart from the bottom coplanar waveguide (CPW) signal line in lateral direction at initial off-state. The switch contact is realized by the dual axis movement, namely a lateral movement by comb electrodes and a following vertical movement by a bottom electrode. The actuation voltages are measured for dual axis movement. The isolation of the switch was measured at 50-110 GHz to prove the concept of isolation improvement using dual axis movement.",
author = "Lee, \{Yong Seok\} and Jang, \{Yun Ho\} and Kim, \{Jung Mu\} and Kim, \{Yong Kweon\}",
year = "2010",
doi = "10.1109/MEMSYS.2010.5442295",
language = "English",
isbn = "9781424457649",
series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",
pages = "759--762",
booktitle = "MEMS 2010 - The 23rd IEEE International Conference on Micro Electro Mechanical Systems, Technical Digest",
note = "23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010 ; Conference date: 24-01-2010 Through 28-01-2010",
}