A boosted voltage generator for low-voltage DRAMs

Seong Ik Cho; Jin Seok Heo; Kyeong Sik Min; Young Hee Kim

doi:10.1016/j.cap.2003.09.003

A boosted voltage generator for low-voltage DRAMs

Seong Ik Cho
, Jin Seok Heo
, Kyeong Sik Min
, Young Hee Kim^*

^*Corresponding author for this work

Division of Electronic Engineering

SK Corporation
Changwon National University
Kookmin University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

Original language	English
Pages (from-to)	501-505
Number of pages	5
Journal	Current Applied Physics
Volume	3
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2003.09.003
State	Published - 2003.12

Keywords

Charge pump
Low-voltage memories
Two-phase

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10.1016/j.cap.2003.09.003

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title = "A boosted voltage generator for low-voltage DRAMs",

abstract = "This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.",

keywords = "Charge pump, Low-voltage memories, Two-phase",

author = "Cho, \{Seong Ik\} and Heo, \{Jin Seok\} and Min, \{Kyeong Sik\} and Kim, \{Young Hee\}",

year = "2003",

month = dec,

doi = "10.1016/j.cap.2003.09.003",

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journal = "Current Applied Physics",

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AU - Cho, Seong Ik

AU - Heo, Jin Seok

AU - Min, Kyeong Sik

AU - Kim, Young Hee

PY - 2003/12

Y1 - 2003/12

N2 - This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

AB - This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

KW - Charge pump

KW - Low-voltage memories

KW - Two-phase

UR - https://www.scopus.com/pages/publications/0242467724

U2 - 10.1016/j.cap.2003.09.003

DO - 10.1016/j.cap.2003.09.003

M3 - Journal article

AN - SCOPUS:0242467724

SN - 1567-1739

VL - 3

SP - 501

EP - 505

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

A boosted voltage generator for low-voltage DRAMs

Abstract

Keywords

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