A Broadband Gm-Boosted Active Feedback CMOS Low-Noise Amplifier for Low- and Mid-Band 5G Applications

An inductor-less wideband LNA is designed for a 5G midband applications. The noise reduction technique is proposed to address the trade-off between input return loss (S11) and noise figure (NF). The proposed structure combines self-cascode transistors and composite transistors to increase gm without consuming additional current, which can improve NF and linearity. In contrast to conventional noise cancellation techniques, the proposed technique improves the NF by reusing current without a path for noise cancellation. The proposed LNA is designed with a 0.13-μ $ m CMOS process and measured. In experiments, the proposed LNA shows a power gain (S21) of 21.5 dB over a 3dB bandwidth of 0.01 1 .7 GHz, and S-11 is less than -10 dB over the range 0.01~2 GHz. Also minimum NF of proposed LNA is 1.1 dB. In case of the linearity, the proposed LNA shows an input-referred third-order intercept point (IIP3) of -7.5 - 2.3 dBm. The power consumption is 9.1 mW from a 1.3 V supply voltage and chip area is 0.18 mm2.