A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area

Seong Ik Cho; Hang Geun Jeong; Hong Kyu Shin; Young Hee Kim

doi:10.1016/j.cap.2006.02.008

A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area

Seong Ik Cho^*
, Hang Geun Jeong
, Hong Kyu Shin
, Young Hee Kim

^*Corresponding author for this work

Division of Electronic Engineering

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

This paper proposes a new bandgap reference (BGR) circuit which adopts a cascode current mirror biasing for reducing the reference voltage variation and a novel sizing method for reducing the PNP BJT area. The proposed BGR was designed and fabricated using 0.18 μm triple-well CMOS process which provides only normal V_TH transistors. The reference voltage variation of BGR was reduced from 0.5 mV (conventional) to 0.09 mV (proposed) using cascode current mirror biasing method. And the ratio of BJT emitter areas was reduced by a factor of 20 through the novel sizing method.

Original language	English
Pages (from-to)	92-95
Number of pages	4
Journal	Current Applied Physics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2006.02.008
State	Published - 2007.01

Keywords

Bandgap reference (BGR)
Cascode current mirror

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.cap.2006.02.008

Cite this

@article{7d557d872d294ec78479728ea718a20b,

title = "A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area",

abstract = "This paper proposes a new bandgap reference (BGR) circuit which adopts a cascode current mirror biasing for reducing the reference voltage variation and a novel sizing method for reducing the PNP BJT area. The proposed BGR was designed and fabricated using 0.18 μm triple-well CMOS process which provides only normal VTH transistors. The reference voltage variation of BGR was reduced from 0.5 mV (conventional) to 0.09 mV (proposed) using cascode current mirror biasing method. And the ratio of BJT emitter areas was reduced by a factor of 20 through the novel sizing method.",

keywords = "Bandgap reference (BGR), Cascode current mirror",

author = "Cho, \{Seong Ik\} and Jeong, \{Hang Geun\} and Shin, \{Hong Kyu\} and Kim, \{Young Hee\}",

year = "2007",

month = jan,

doi = "10.1016/j.cap.2006.02.008",

language = "English",

volume = "7",

pages = "92--95",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "1",

}

TY - JOUR

T1 - A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area

AU - Cho, Seong Ik

AU - Jeong, Hang Geun

AU - Shin, Hong Kyu

AU - Kim, Young Hee

PY - 2007/1

Y1 - 2007/1

N2 - This paper proposes a new bandgap reference (BGR) circuit which adopts a cascode current mirror biasing for reducing the reference voltage variation and a novel sizing method for reducing the PNP BJT area. The proposed BGR was designed and fabricated using 0.18 μm triple-well CMOS process which provides only normal VTH transistors. The reference voltage variation of BGR was reduced from 0.5 mV (conventional) to 0.09 mV (proposed) using cascode current mirror biasing method. And the ratio of BJT emitter areas was reduced by a factor of 20 through the novel sizing method.

AB - This paper proposes a new bandgap reference (BGR) circuit which adopts a cascode current mirror biasing for reducing the reference voltage variation and a novel sizing method for reducing the PNP BJT area. The proposed BGR was designed and fabricated using 0.18 μm triple-well CMOS process which provides only normal VTH transistors. The reference voltage variation of BGR was reduced from 0.5 mV (conventional) to 0.09 mV (proposed) using cascode current mirror biasing method. And the ratio of BJT emitter areas was reduced by a factor of 20 through the novel sizing method.

KW - Bandgap reference (BGR)

KW - Cascode current mirror

UR - https://www.scopus.com/pages/publications/33749265659

U2 - 10.1016/j.cap.2006.02.008

DO - 10.1016/j.cap.2006.02.008

M3 - Journal article

AN - SCOPUS:33749265659

SN - 1567-1739

VL - 7

SP - 92

EP - 95

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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