A Comparative Study of Vertical and Horizontal p-Type InN Nano wires Grown by MOCVD for an Optoelectronic Application

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of Nanoelectronics and Optoelectronics
State	Published - 2017.05.22

Cite this

@article{2af5ac9902794180abe5121d911ee6c7,

title = "A Comparative Study of Vertical and Horizontal p-Type InN Nano wires Grown by MOCVD for an Optoelectronic Application",

author = "Inseok Seo and Cheul-Ro Lee",

year = "2017",

month = may,

day = "22",

language = "Korean",

journal = "Journal of Nanoelectronics and Optoelectronics",

issn = "1555-130X",

}