A light incident angle switchable ZnO nanorod memristor: Reversible switching behavior between two non-volatile memory devices

Jinjoo Park; Seunghyup Lee; Junghan Lee; Kijung Yong

doi:10.1002/adma.201303017

A light incident angle switchable ZnO nanorod memristor: Reversible switching behavior between two non-volatile memory devices

Jinjoo Park
, Seunghyup Lee
, Junghan Lee
, Kijung Yong^*

^*Corresponding author for this work

Division of Chemical Engineering

Pohang University of Science and Technology
Samsung

Research output: Contribution to journal › Journal article › peer-review

144 Scopus citations

Abstract

A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

Original language	English
Pages (from-to)	6423-6429
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	44
DOIs	https://doi.org/10.1002/adma.201303017
State	Published - 2013.11.26

Keywords

incident angle
light
memristive switching
superhydrophobicity
ZnO nanorod

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10.1002/adma.201303017

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@article{c9eeec5196054d6bb8f4f3c86ff7b8ba,

title = "A light incident angle switchable ZnO nanorod memristor: Reversible switching behavior between two non-volatile memory devices",

abstract = "A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.",

keywords = "incident angle, light, memristive switching, superhydrophobicity, ZnO nanorod",

author = "Jinjoo Park and Seunghyup Lee and Junghan Lee and Kijung Yong",

year = "2013",

month = nov,

day = "26",

doi = "10.1002/adma.201303017",

language = "English",

volume = "25",

pages = "6423--6429",

journal = "Advanced Materials",

issn = "0935-9648",

number = "44",

}

TY - JOUR

T1 - A light incident angle switchable ZnO nanorod memristor

T2 - Reversible switching behavior between two non-volatile memory devices

AU - Park, Jinjoo

AU - Lee, Seunghyup

AU - Lee, Junghan

AU - Yong, Kijung

PY - 2013/11/26

Y1 - 2013/11/26

N2 - A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

AB - A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

KW - incident angle

KW - light

KW - memristive switching

KW - superhydrophobicity

KW - ZnO nanorod

UR - https://www.scopus.com/pages/publications/84888640121

U2 - 10.1002/adma.201303017

DO - 10.1002/adma.201303017

M3 - Journal article

AN - SCOPUS:84888640121

SN - 0935-9648

VL - 25

SP - 6423

EP - 6429

JO - Advanced Materials

JF - Advanced Materials

IS - 44

ER -

A light incident angle switchable ZnO nanorod memristor: Reversible switching behavior between two non-volatile memory devices

Abstract

Keywords

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