TY - GEN
T1 - A multi crossing wire bonding technique for high power transistor packages
AU - Jongsik, Lim
AU - Seongmin, Oh
AU - Yongho, Lee
AU - Jakyung, Koo
AU - Yongchae, Jeong
AU - Dal, Ahn
PY - 2009
Y1 - 2009
N2 - This paper describes an advanced wire bonding technique which utilizes a three-dimensional multi crossing structure for high power RF transistor packages. High power transistor packages consist of high power transistor die, chip capacitors, metallic package housing, in/out lead connection, and lots of bonding wires. For a given transistor die and restricted narrow area inside the package housing, the output power strongly depends on the matching networks, i.e. chip capacitor value and the length of bonding wires which correspond to inductances for matching. In this study, a multi crossing wire bonding technique is proposed in order to provide the longer bonding wire than the conventional stepping stone wire bonding structure within the given restricted area inside the package housing. As an example, a 16 mm GaN high power transistor package is designed and compared using the both wire bonding techniques. The transistor package using the proposed multi crossing wire bonding technique shows improved linear power gain by 2dB at 1GHz for the same input power.
AB - This paper describes an advanced wire bonding technique which utilizes a three-dimensional multi crossing structure for high power RF transistor packages. High power transistor packages consist of high power transistor die, chip capacitors, metallic package housing, in/out lead connection, and lots of bonding wires. For a given transistor die and restricted narrow area inside the package housing, the output power strongly depends on the matching networks, i.e. chip capacitor value and the length of bonding wires which correspond to inductances for matching. In this study, a multi crossing wire bonding technique is proposed in order to provide the longer bonding wire than the conventional stepping stone wire bonding structure within the given restricted area inside the package housing. As an example, a 16 mm GaN high power transistor package is designed and compared using the both wire bonding techniques. The transistor package using the proposed multi crossing wire bonding technique shows improved linear power gain by 2dB at 1GHz for the same input power.
UR - https://www.scopus.com/pages/publications/72949101802
U2 - 10.1109/EUMC.2009.5296177
DO - 10.1109/EUMC.2009.5296177
M3 - Conference paper
AN - SCOPUS:72949101802
SN - 9782874870118
T3 - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009
SP - 1353
EP - 1356
BT - European Microwave Week 2009, EuMW 2009
T2 - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 39th European Microwave Conference, EuMC 2009
Y2 - 28 September 2009 through 2 October 2009
ER -