A new ferroelectric material for FRAM applications: Lanthanum-substituted bismuth titanate

T. W. Noh; B. S. Kang; Y. W. So; B. H. Park; S. D. Bu

A new ferroelectric material for FRAM applications: Lanthanum-substituted bismuth titanate

T. W. Noh^*
, B. S. Kang
, Y. W. So
, B. H. Park
, S. D. Bu

^*Corresponding author for this work

Department of Physics

Seoul National University
Konkuk University

Research output: Contribution to journal › Journal article › peer-review

15 Scopus citations

Abstract

SrBi₂Ta₂O₉ (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi₂O₂)²⁺ layers in the Bilayered perovskite structure. However, Bi₄Ti₃O₁₂ (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi₂O₂)²⁺ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi_3.25La_0.75Ti₃O₁₂ films. In addition to fatigue-free characteristics, these new materials have excellent properties for FRAM applications, including a low processing temperature and a large remnant polarization value.

Original language	English
Pages (from-to)	S35-S38
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	SUPPL. Part 1
State	Published - 2001.12

Cite this

@article{667da07067d94864b19a0dee468ae915,

title = "A new ferroelectric material for FRAM applications: Lanthanum-substituted bismuth titanate",

abstract = "SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bilayered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties for FRAM applications, including a low processing temperature and a large remnant polarization value.",

author = "Noh, \{T. W.\} and Kang, \{B. S.\} and So, \{Y. W.\} and Park, \{B. H.\} and Bu, \{S. D.\}",

year = "2001",

month = dec,

language = "English",

volume = "39",

pages = "S35--S38",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "SUPPL. Part 1",

}

TY - JOUR

T1 - A new ferroelectric material for FRAM applications

T2 - Lanthanum-substituted bismuth titanate

AU - Noh, T. W.

AU - Kang, B. S.

AU - So, Y. W.

AU - Park, B. H.

AU - Bu, S. D.

PY - 2001/12

Y1 - 2001/12

N2 - SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bilayered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties for FRAM applications, including a low processing temperature and a large remnant polarization value.

AB - SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bilayered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties for FRAM applications, including a low processing temperature and a large remnant polarization value.

UR - https://www.scopus.com/pages/publications/0035542230

M3 - Journal article

AN - SCOPUS:0035542230

SN - 0374-4884

VL - 39

SP - S35-S38

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. Part 1

ER -

A new ferroelectric material for FRAM applications: Lanthanum-substituted bismuth titanate

Abstract

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