A new ferroelectric material for use in FRAM: Lanthanum-substituted bismuth titanate

T. W. Noh; B. H. Park; B. S. Kang; S. D. Bu; J. Lee

A new ferroelectric material for use in FRAM: Lanthanum-substituted bismuth titanate

T. W. Noh^*
, B. H. Park
, B. S. Kang
, S. D. Bu
, J. Lee

^*Corresponding author for this work

Department of Physics

Seoul National University

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

SrBi₂Ta₂O₉ (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi₂O₂)²⁺ layers in the Bi-layered perovskite structure. However, Bi₄Ti₃O₁₂ (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi₂O₂)²⁺ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi_3.25La_0.75Ti₃O₁₂ films. In addition to fatigue-free characteristics, these new materials have excellent properties of FRAM applications, including a low processing temperature and a large remnant polarization value.

Original language	English
Pages	237-242
Number of pages	6
State	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 2000.07.21 → 2000.08.2

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	00.07.21 → 00.08.2

Cite this

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title = "A new ferroelectric material for use in FRAM: Lanthanum-substituted bismuth titanate",

abstract = "SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bi-layered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties of FRAM applications, including a low processing temperature and a large remnant polarization value.",

author = "Noh, \{T. W.\} and Park, \{B. H.\} and Kang, \{B. S.\} and Bu, \{S. D.\} and J. Lee",

year = "2000",

language = "English",

pages = "237--242",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

}

TY - CONF

T1 - A new ferroelectric material for use in FRAM

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

AU - Noh, T. W.

AU - Park, B. H.

AU - Kang, B. S.

AU - Bu, S. D.

AU - Lee, J.

PY - 2000

Y1 - 2000

N2 - SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bi-layered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties of FRAM applications, including a low processing temperature and a large remnant polarization value.

AB - SrBi2Ta2O9 (SBT) thin films have attracted much attention due to their fatigue-free properties for ferroelectric random access memory (FRAM) applications. It was believed that the fatigue-free characteristics of SBT should be originated from the presence of the (Bi2O2)2+ layers in the Bi-layered perovskite structure. However, Bi4Ti3O12 (BTO) films showed fatigue failures although they have the same crystal structure and the (Bi2O2)2+ layers. Recently, we elucidated the differences in SBT and BTO films using XPS studies, and claimed that the oxygen chemical stability in the perovskite layers should play an important role in the fatigue-free behaviors. Based on this finding, we substitute some of the Bi ions with La ions to obtain ferroelectric Bi3.25La0.75Ti3O12 films. In addition to fatigue-free characteristics, these new materials have excellent properties of FRAM applications, including a low processing temperature and a large remnant polarization value.

UR - https://www.scopus.com/pages/publications/0034473540

M3 - Paper

AN - SCOPUS:0034473540

SP - 237

EP - 242

Y2 - 21 July 2000 through 2 August 2000

ER -

A new ferroelectric material for use in FRAM: Lanthanum-substituted bismuth titanate

Abstract

Conference

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