TY - GEN
T1 - A Novel Scalable Energy-Efficient Synaptic Device
T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019
AU - Si, M.
AU - Ye, P. D.
AU - Luo, Y.
AU - Chung, W.
AU - Bae, H.
AU - Zheng, D.
AU - Li, J.
AU - Qin, J.
AU - Qiu, G.
AU - Yu, S.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - A novel ferroelectric semiconductor junction (FSJ) based two-terminal memristor is demonstrated as a synaptic device for the first time. In this novel FSJ device, a metal-ferroelectric semiconductor (FS)-metal crossbar structure is used, instead of a metal-ferroelectric insulator-metal structure for a conventional ferroelectric tunnel junction (FTJ), so that an ultra-thin ferroelectric insulator is not required. Meanwhile, the FSJ also offers energy efficiency advantage over the conventional filament-based resistive random access memory (RRAM) device because the conductance of the FSJ scales with the junction area. Experimentally, a ferroelectric semiconductor α-In2Se3 based crossbar FSJ (c-FSJ) as a synaptic device is demonstrated. Ferroelectric resistive switching is clearly observed in both planar FSJ (p-FSJ) by in-plane polarization switching and c-FSJ by out-of-plane polarization switching. Conductance potentiation and depression in the c-FSJ are measured and benchmarked at both original size and projected to 32 nm node with different synaptic devices. α-In2Se3 c-FSJ shows good on-line learning accuracy (~92 %), low latency and energy consumption due to the short write pulse width and large RON.
AB - A novel ferroelectric semiconductor junction (FSJ) based two-terminal memristor is demonstrated as a synaptic device for the first time. In this novel FSJ device, a metal-ferroelectric semiconductor (FS)-metal crossbar structure is used, instead of a metal-ferroelectric insulator-metal structure for a conventional ferroelectric tunnel junction (FTJ), so that an ultra-thin ferroelectric insulator is not required. Meanwhile, the FSJ also offers energy efficiency advantage over the conventional filament-based resistive random access memory (RRAM) device because the conductance of the FSJ scales with the junction area. Experimentally, a ferroelectric semiconductor α-In2Se3 based crossbar FSJ (c-FSJ) as a synaptic device is demonstrated. Ferroelectric resistive switching is clearly observed in both planar FSJ (p-FSJ) by in-plane polarization switching and c-FSJ by out-of-plane polarization switching. Conductance potentiation and depression in the c-FSJ are measured and benchmarked at both original size and projected to 32 nm node with different synaptic devices. α-In2Se3 c-FSJ shows good on-line learning accuracy (~92 %), low latency and energy consumption due to the short write pulse width and large RON.
UR - https://www.scopus.com/pages/publications/85081052396
U2 - 10.1109/IEDM19573.2019.8993622
DO - 10.1109/IEDM19573.2019.8993622
M3 - Conference paper
AN - SCOPUS:85081052396
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 7 December 2019 through 11 December 2019
ER -