A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Geon Beom Lee; Choong Ki Kim; Jun Young Park; Tewook Bang; Hagyoul Bae; Seong Yeon Kim; Seung Wan Ryu; Yang Kyu Choi

doi:10.1109/LED.2017.2718583

A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Geon Beom Lee
, Choong Ki Kim
, Jun Young Park
, Tewook Bang
, Hagyoul Bae
, Seong Yeon Kim
, Seung Wan Ryu
, Yang Kyu Choi^*

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
SK Corporation

Research output: Contribution to journal › Journal article › peer-review

25 Scopus citations

Abstract

The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain, for the first time. The effective recovery voltage and pulse time were optimized to cure the gate dielectric damage produced by hot-carrier injection. Moreover, iterative damage and cyclic curing were experimentally demonstrated. Through low-frequency noise analyses, the degradation and recovery were verified by identifying trap density along the depth of the gate dielectric. Furthermore, this proposed method produced nearly the same recovery characteristics through source-to-body junction current in a short-channel device.

Original language	English
Article number	7955015
Pages (from-to)	1012-1014
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/LED.2017.2718583
State	Published - 2017.08

Keywords

Degradation
forward current
gate dielectric curing
hot-carrier injection (HCI)
Joule heat
low-frequency noise (LFN) characterization
metal-oxide-silicon field effect transistor (MOSFET)
PN-junction
recovery
short-channel effects (SCEs)

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10.1109/LED.2017.2718583

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@article{ced25f9ba398450c84e563832ef1d552,

title = "A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET",

abstract = "The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain, for the first time. The effective recovery voltage and pulse time were optimized to cure the gate dielectric damage produced by hot-carrier injection. Moreover, iterative damage and cyclic curing were experimentally demonstrated. Through low-frequency noise analyses, the degradation and recovery were verified by identifying trap density along the depth of the gate dielectric. Furthermore, this proposed method produced nearly the same recovery characteristics through source-to-body junction current in a short-channel device.",

keywords = "Degradation, forward current, gate dielectric curing, hot-carrier injection (HCI), Joule heat, low-frequency noise (LFN) characterization, metal-oxide-silicon field effect transistor (MOSFET), PN-junction, recovery, short-channel effects (SCEs)",

author = "Lee, \{Geon Beom\} and Kim, \{Choong Ki\} and Park, \{Jun Young\} and Tewook Bang and Hagyoul Bae and Kim, \{Seong Yeon\} and Ryu, \{Seung Wan\} and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/LED.2017.2718583",

language = "English",

volume = "38",

pages = "1012--1014",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "8",

}

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T1 - A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

AU - Lee, Geon Beom

AU - Kim, Choong Ki

AU - Park, Jun Young

AU - Bang, Tewook

AU - Bae, Hagyoul

AU - Kim, Seong Yeon

AU - Ryu, Seung Wan

AU - Choi, Yang Kyu

PY - 2017/8

Y1 - 2017/8

N2 - The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain, for the first time. The effective recovery voltage and pulse time were optimized to cure the gate dielectric damage produced by hot-carrier injection. Moreover, iterative damage and cyclic curing were experimentally demonstrated. Through low-frequency noise analyses, the degradation and recovery were verified by identifying trap density along the depth of the gate dielectric. Furthermore, this proposed method produced nearly the same recovery characteristics through source-to-body junction current in a short-channel device.

AB - The hot-carrier-induced damage of a gate dielectric was cured with Joule heat generated by the forward current of the p-n junction between the body and drain, for the first time. The effective recovery voltage and pulse time were optimized to cure the gate dielectric damage produced by hot-carrier injection. Moreover, iterative damage and cyclic curing were experimentally demonstrated. Through low-frequency noise analyses, the degradation and recovery were verified by identifying trap density along the depth of the gate dielectric. Furthermore, this proposed method produced nearly the same recovery characteristics through source-to-body junction current in a short-channel device.

KW - Degradation

KW - forward current

KW - gate dielectric curing

KW - hot-carrier injection (HCI)

KW - Joule heat

KW - low-frequency noise (LFN) characterization

KW - metal-oxide-silicon field effect transistor (MOSFET)

KW - PN-junction

KW - recovery

KW - short-channel effects (SCEs)

UR - https://www.scopus.com/pages/publications/85021825401

U2 - 10.1109/LED.2017.2718583

DO - 10.1109/LED.2017.2718583

M3 - Journal article

AN - SCOPUS:85021825401

SN - 0741-3106

VL - 38

SP - 1012

EP - 1014

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 7955015

ER -

A Novel Technique for Curing Hot-Carrier-Induced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

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Keywords

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