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A packaged 2.3 GHz SiGe VCO with parallel-branch inductors

  • Ja Yol Lee*
  • , Dongwoo Suh
  • , Sang Heung Lee
  • , Seung Yun Lee
  • , Chan Woo Park
  • , Sang Hoon Kim
  • , Kyu Hwan Shim
  • , Jin Young Kang
  • , Kyoung Ik Cho
  • , Seung Hyeub Oh
  • *Corresponding author for this work
  • Electronics and Telecommunications Research Institute
  • Chungnam National University

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of -122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.

Original languageEnglish
Pages (from-to)A141-A144
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
StatePublished - 2003
Event2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States
Duration: 2003.06.82003.06.13

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