Abstract
In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of -122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.
| Original language | English |
|---|---|
| Pages (from-to) | A141-A144 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1 |
| State | Published - 2003 |
| Event | 2003 IEEE MTT-S International Microwave Symposium Digest - Philadelphia, PA, United States Duration: 2003.06.8 → 2003.06.13 |
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