A packaged 2.3 GHz SiGe VCO with parallel-branch inductors

Ja Yol Lee; Dongwoo Suh; Sang Heung Lee; Seung Yun Lee; Chan Woo Park; Sang Hoon Kim; Kyu Hwan Shim; Jin Young Kang; Kyoung Ik Cho; Seung Hyeub Oh

A packaged 2.3 GHz SiGe VCO with parallel-branch inductors

Ja Yol Lee^*
, Dongwoo Suh
, Sang Heung Lee
, Seung Yun Lee
, Chan Woo Park
, Sang Hoon Kim
, Kyu Hwan Shim
, Jin Young Kang
, Kyoung Ik Cho
, Seung Hyeub Oh

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Chungnam National University

Research output: Contribution to conference › Paper › peer-review

6 Scopus citations

Abstract

In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of-122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.

Original language	English
Pages	655-658
Number of pages	4
State	Published - 2003
Event	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States Duration: 2003.06.8 → 2003.06.10

Conference

Conference	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Philadelphia, PA
Period	03.06.8 → 03.06.10

Cite this

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title = "A packaged 2.3 GHz SiGe VCO with parallel-branch inductors",

abstract = "In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of-122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.",

author = "Lee, \{Ja Yol\} and Dongwoo Suh and Lee, \{Sang Heung\} and Lee, \{Seung Yun\} and Park, \{Chan Woo\} and Kim, \{Sang Hoon\} and Shim, \{Kyu Hwan\} and Kang, \{Jin Young\} and Cho, \{Kyoung Ik\} and Oh, \{Seung Hyeub\}",

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language = "English",

pages = "655--658",

note = "2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 08-06-2003 Through 10-06-2003",

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T1 - A packaged 2.3 GHz SiGe VCO with parallel-branch inductors

AU - Lee, Ja Yol

AU - Suh, Dongwoo

AU - Lee, Sang Heung

AU - Lee, Seung Yun

AU - Park, Chan Woo

AU - Kim, Sang Hoon

AU - Shim, Kyu Hwan

AU - Kang, Jin Young

AU - Cho, Kyoung Ik

AU - Oh, Seung Hyeub

PY - 2003

Y1 - 2003

N2 - In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of-122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.

AB - In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of-122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.

UR - https://www.scopus.com/pages/publications/0042661249

M3 - Paper

AN - SCOPUS:0042661249

SP - 655

EP - 658

T2 - 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 8 June 2003 through 10 June 2003

ER -

A packaged 2.3 GHz SiGe VCO with parallel-branch inductors

Abstract

Conference

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