A Paired MOS Charge Pump for Low Voltage Operation

  • Jin Hyeok Choi*
  • , Seong Ik Cho
  • , Mu Hun Park
  • , Young Hee Kim
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

We present a new multi-stage charge pump that is suitable for low-voltage operation, and in particular for low voltage flash memory. Compare to the Dickson charge pump and previously reported modified Dickson charge pumps, the proposed charge pump offers the improved pumping voltage gains. The proposed charge pump is composed of a pair of pumps and utilizes the internal boosted voltages of one side of the paired pumps as the charge transferring voltages to the other side. The simulated and measured results indicate that the proposed pump is highly efficient in overcoming both the pumping gain decrease and the current driving capability degradation caused by the threshold voltage of the charge-transfer gate.

Original languageEnglish
Pages (from-to)859-863
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number5
StatePublished - 2003.05

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Charge pump
  • Flash memory
  • High-voltage generator
  • Low-voltage operation

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