A PVT insensitive noise canceling balun-LNA for TV receiver applications

A process, voltage, and temperature (PVT) insensitive noise canceling blaun-LNA is implemented in 0.13 μm CMOS process for TV receiver applications. The proposed balun-LNA is composed of only NMOS transistors, and its voltage gain is determined by transconductance (g_m) ratio of the transistors of the same type. This makes the voltage gain and NF of the LNA insensitive to PVT variations. In addition, the unity gain CS amplifier with diode-connected load is added in order to reduce the noise contribution from the CS stage in the proposed balun LNA. In spite of the additional noise contribution from the unity gain CS amplifier, the proposed LNA improves the overall noise figure (NF) performance. In the post-layout simulation, the proposed balun-LNA shows a power gain (S₂₁) of 14.5 dB, a NF of less than 2.6 dB, an input return loss (S₁₁) of greater than 10 dB at 500 MHz and typical corner condition (tt, 1.2 V, 27^◦C). The variation of S₂₁ and NF at 500 MHz is about 2.5 dB and 0.8 dB, respectively, over all corner variations. The power consumption of the proposed balun-LNA excluding the output buffer is about 3.6 mW at a 1.2 V supply.