A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET

Hagyoul Bae; Choong Ki Kim; Seung Bae Jeon; Gwang Hyuk Shin; Eung Taek Kim; Jeong Gyu Song; Youngjun Kim; Dong Il Lee; Hyungjun Kim; Sung Yool Choi; Kyung Cheol Choi; Yang Kyu Choi

doi:10.1109/LED.2015.2509473

A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS₂ FET

Hagyoul Bae^*
, Choong Ki Kim
, Seung Bae Jeon
, Gwang Hyuk Shin
, Eung Taek Kim
, Jeong Gyu Song
, Youngjun Kim
, Dong Il Lee
, Hyungjun Kim
, Sung Yool Choi
, Kyung Cheol Choi
, Yang Kyu Choi

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
Yonsei University

Research output: Contribution to journal › Journal article › peer-review

10 Scopus citations

Abstract

Asymmetric source and drain (S/D) series resistances ( R_S and R_D ) are unavoidable in exfoliated MoS₂ field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric R_S and R_D values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic R_S and R_D values ( R_S,int and R_D,int) are characterized through deembedding the parasitic pad capacitances (C_Pad = C_S,Pad+C_D,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the I_D- V_D characteristics in the linear region. Finally, R_S,int and R_D,int at various parasitic overlap areas are extracted separately with improved accuracy.

Original language	English
Article number	7377027
Pages (from-to)	231-233
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	37
Issue number	2
DOIs	https://doi.org/10.1109/LED.2015.2509473
State	Published - 2016.02.1

Keywords

Asymmetric structure
Drain resistance (RD)
Exfoliation
MoS2 FET
Parasitic capacitance
Parasitic contact resistance
Separate extraction
Source resistance (RS)

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10.1109/LED.2015.2509473

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Bae, H., Kim, C. K., Jeon, S. B., Shin, G. H., Kim, E. T., Song, J. G., Kim, Y., Lee, D. I., Kim, H., Choi, S. Y., Choi, K. C., & Choi, Y. K. (2016). A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS₂ FET. IEEE Electron Device Letters, 37(2), 231-233. Article 7377027. https://doi.org/10.1109/LED.2015.2509473

@article{7f9c8508b960417992545eebd1320fe2,

title = "A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET",

abstract = "Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS2 field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances (CPad = CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID- VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.",

keywords = "Asymmetric structure, Drain resistance (RD), Exfoliation, MoS2 FET, Parasitic capacitance, Parasitic contact resistance, Separate extraction, Source resistance (RS)",

author = "Hagyoul Bae and Kim, \{Choong Ki\} and Jeon, \{Seung Bae\} and Shin, \{Gwang Hyuk\} and Kim, \{Eung Taek\} and Song, \{Jeong Gyu\} and Youngjun Kim and Lee, \{Dong Il\} and Hyungjun Kim and Choi, \{Sung Yool\} and Choi, \{Kyung Cheol\} and Choi, \{Yang Kyu\}",

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year = "2016",

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day = "1",

doi = "10.1109/LED.2015.2509473",

language = "English",

volume = "37",

pages = "231--233",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "2",

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Bae, H, Kim, CK, Jeon, SB, Shin, GH, Kim, ET, Song, JG, Kim, Y, Lee, DI, Kim, H, Choi, SY, Choi, KC & Choi, YK 2016, 'A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS₂ FET', IEEE Electron Device Letters, vol. 37, no. 2, 7377027, pp. 231-233. https://doi.org/10.1109/LED.2015.2509473

TY - JOUR

T1 - A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET

AU - Bae, Hagyoul

AU - Kim, Choong Ki

AU - Jeon, Seung Bae

AU - Shin, Gwang Hyuk

AU - Kim, Eung Taek

AU - Song, Jeong Gyu

AU - Kim, Youngjun

AU - Lee, Dong Il

AU - Kim, Hyungjun

AU - Choi, Sung Yool

AU - Choi, Kyung Cheol

AU - Choi, Yang Kyu

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS2 field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances (CPad = CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID- VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.

AB - Asymmetric source and drain (S/D) series resistances ( RS and RD ) are unavoidable in exfoliated MoS2 field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RS and RD values are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RS and RD values ( RS,int and RD,int) are characterized through deembedding the parasitic pad capacitances (CPad = CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID- VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.

KW - Asymmetric structure

KW - Drain resistance (RD)

KW - Exfoliation

KW - MoS2 FET

KW - Parasitic capacitance

KW - Parasitic contact resistance

KW - Separate extraction

KW - Source resistance (RS)

UR - https://www.scopus.com/pages/publications/84962022065

U2 - 10.1109/LED.2015.2509473

DO - 10.1109/LED.2015.2509473

M3 - Journal article

AN - SCOPUS:84962022065

SN - 0741-3106

VL - 37

SP - 231

EP - 233

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 7377027

ER -

A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS₂ FET

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Keywords

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