a-Si:H film deposition using same phase modulated scanning plasma method

Yoko Maemura; Toru Yamaguchi; Sung Chae Yang; Hiroshi Fujiyama

doi:10.1016/S0040-6090(00)01164-0

a-Si:H film deposition using same phase modulated scanning plasma method

Yoko Maemura
, Toru Yamaguchi
, Sung Chae Yang
, Hiroshi Fujiyama

Department of Electrical Engineering

Nagasaki University

Research output: Contribution to journal › Journal article › peer-review

Abstract

The effects of a magnetic field perpendicular to a discharge electric field (cross-magnetic field) and their modulation phase are discussed in a plasma enhanced chemical vapor deposition (PECVD) system as important external control parameters for the preparation of hydrogenated amorphous silicon (a-Si:H) using silane (SiH₄) plasmas. In this paper, a-Si:H thin films are prepared under the conditions of the same and random phase modulations of an electric field (E) and a magnetic field (B). The effects of removal and growth suppression on silicon particles owing to the same phase modulation of E and B fields can suppress the disorder parameter and the surface roughness of the deposited films.

Original language	English
Pages (from-to)	274-277
Number of pages	4
Journal	Thin Solid Films
Volume	374
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(00)01164-0
State	Published - 2000.10.17

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10.1016/S0040-6090(00)01164-0

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title = "a-Si:H film deposition using same phase modulated scanning plasma method",

abstract = "The effects of a magnetic field perpendicular to a discharge electric field (cross-magnetic field) and their modulation phase are discussed in a plasma enhanced chemical vapor deposition (PECVD) system as important external control parameters for the preparation of hydrogenated amorphous silicon (a-Si:H) using silane (SiH4) plasmas. In this paper, a-Si:H thin films are prepared under the conditions of the same and random phase modulations of an electric field (E) and a magnetic field (B). The effects of removal and growth suppression on silicon particles owing to the same phase modulation of E and B fields can suppress the disorder parameter and the surface roughness of the deposited films.",

author = "Yoko Maemura and Toru Yamaguchi and Yang, \{Sung Chae\} and Hiroshi Fujiyama",

year = "2000",

month = oct,

day = "17",

doi = "10.1016/S0040-6090(00)01164-0",

language = "English",

volume = "374",

pages = "274--277",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "2",

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TY - JOUR

T1 - a-Si:H film deposition using same phase modulated scanning plasma method

AU - Maemura, Yoko

AU - Yamaguchi, Toru

AU - Yang, Sung Chae

AU - Fujiyama, Hiroshi

PY - 2000/10/17

Y1 - 2000/10/17

N2 - The effects of a magnetic field perpendicular to a discharge electric field (cross-magnetic field) and their modulation phase are discussed in a plasma enhanced chemical vapor deposition (PECVD) system as important external control parameters for the preparation of hydrogenated amorphous silicon (a-Si:H) using silane (SiH4) plasmas. In this paper, a-Si:H thin films are prepared under the conditions of the same and random phase modulations of an electric field (E) and a magnetic field (B). The effects of removal and growth suppression on silicon particles owing to the same phase modulation of E and B fields can suppress the disorder parameter and the surface roughness of the deposited films.

AB - The effects of a magnetic field perpendicular to a discharge electric field (cross-magnetic field) and their modulation phase are discussed in a plasma enhanced chemical vapor deposition (PECVD) system as important external control parameters for the preparation of hydrogenated amorphous silicon (a-Si:H) using silane (SiH4) plasmas. In this paper, a-Si:H thin films are prepared under the conditions of the same and random phase modulations of an electric field (E) and a magnetic field (B). The effects of removal and growth suppression on silicon particles owing to the same phase modulation of E and B fields can suppress the disorder parameter and the surface roughness of the deposited films.

UR - https://www.scopus.com/pages/publications/0034290961

U2 - 10.1016/S0040-6090(00)01164-0

DO - 10.1016/S0040-6090(00)01164-0

M3 - Journal article

AN - SCOPUS:0034290961

SN - 0040-6090

VL - 374

SP - 274

EP - 277

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

a-Si:H film deposition using same phase modulated scanning plasma method

Abstract

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