A two-step etching technique for silica terraces in the PLC hybrid integration

Young Tak Han; Sang Ho Park; Jang Uk Shin; Duk Jun Kim; Yoon Jung Park; Sung Woong Park; Jongdeog Kim; Hee Kyung Sung

doi:10.1109/LPT.2004.835219

A two-step etching technique for silica terraces in the PLC hybrid integration

Young Tak Han^*
, Sang Ho Park
, Jang Uk Shin
, Duk Jun Kim
, Yoon Jung Park
, Sung Woong Park
, Jongdeog Kim
, Hee Kyung Sung

^*Corresponding author for this work

Division of Chemical Engineering

Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

12 Scopus citations

Abstract

Two-step etching, after the full processes of a silica waveguide, was performed to fabricate a silica-terraced planar lightwave circuit platform for the hybrid integration of optoelectronic devices. Spot-size converted distributed feedback laser diodes (SSC DFB LDs) were flip-chip bonded on silica terraces with the height accuracy of less than 1 μm, and the resultant coupling loss between the SSC DFB LD and the silica waveguide was about 3.78 dB. The fight-current curve of the LD filp-chip bonded on the platform showed the almost linear increase of the output power without any saturation.

Original language	English
Pages (from-to)	2436-2438
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2004.835219
State	Published - 2004.11

Access to Document

10.1109/LPT.2004.835219

Cite this

@article{ffe8ceea20324d01936f23bd606826c9,

title = "A two-step etching technique for silica terraces in the PLC hybrid integration",

abstract = "Two-step etching, after the full processes of a silica waveguide, was performed to fabricate a silica-terraced planar lightwave circuit platform for the hybrid integration of optoelectronic devices. Spot-size converted distributed feedback laser diodes (SSC DFB LDs) were flip-chip bonded on silica terraces with the height accuracy of less than 1 μm, and the resultant coupling loss between the SSC DFB LD and the silica waveguide was about 3.78 dB. The fight-current curve of the LD filp-chip bonded on the platform showed the almost linear increase of the output power without any saturation.",

author = "Han, \{Young Tak\} and Park, \{Sang Ho\} and Shin, \{Jang Uk\} and Kim, \{Duk Jun\} and Park, \{Yoon Jung\} and Park, \{Sung Woong\} and Jongdeog Kim and Sung, \{Hee Kyung\}",

year = "2004",

month = nov,

doi = "10.1109/LPT.2004.835219",

language = "English",

volume = "16",

pages = "2436--2438",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "11",

}

TY - JOUR

T1 - A two-step etching technique for silica terraces in the PLC hybrid integration

AU - Han, Young Tak

AU - Park, Sang Ho

AU - Shin, Jang Uk

AU - Kim, Duk Jun

AU - Park, Yoon Jung

AU - Park, Sung Woong

AU - Kim, Jongdeog

AU - Sung, Hee Kyung

PY - 2004/11

Y1 - 2004/11

N2 - Two-step etching, after the full processes of a silica waveguide, was performed to fabricate a silica-terraced planar lightwave circuit platform for the hybrid integration of optoelectronic devices. Spot-size converted distributed feedback laser diodes (SSC DFB LDs) were flip-chip bonded on silica terraces with the height accuracy of less than 1 μm, and the resultant coupling loss between the SSC DFB LD and the silica waveguide was about 3.78 dB. The fight-current curve of the LD filp-chip bonded on the platform showed the almost linear increase of the output power without any saturation.

AB - Two-step etching, after the full processes of a silica waveguide, was performed to fabricate a silica-terraced planar lightwave circuit platform for the hybrid integration of optoelectronic devices. Spot-size converted distributed feedback laser diodes (SSC DFB LDs) were flip-chip bonded on silica terraces with the height accuracy of less than 1 μm, and the resultant coupling loss between the SSC DFB LD and the silica waveguide was about 3.78 dB. The fight-current curve of the LD filp-chip bonded on the platform showed the almost linear increase of the output power without any saturation.

UR - https://www.scopus.com/pages/publications/7744223871

U2 - 10.1109/LPT.2004.835219

DO - 10.1109/LPT.2004.835219

M3 - Journal article

AN - SCOPUS:7744223871

SN - 1041-1135

VL - 16

SP - 2436

EP - 2438

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

A two-step etching technique for silica terraces in the PLC hybrid integration

Abstract

Access to Document

Other files and links

Fingerprint

Cite this