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A Wide Temperature 112-Gbaud PAM4 Operation of Lumped-EML Submodule Using Resistance-Optimized LC Resonance Effect

  • Seok Jun Yun
  • , Young Tak Han*
  • , Dong Hoon Lee
  • , Dong Hyo Lee
  • , Jang Uk Shin
  • , Sang Ho Park
  • , Hoon Kim*
  • , Yongsoon Baek
  • *Corresponding author for this work
  • Electronics and Telecommunications Research Institute
  • Korea Advanced Institute of Science and Technology

Research output: Contribution to journalJournal articlepeer-review

Abstract

We present a high-speed (>70 GHz) lumped-EML submodule whose modulation bandwidth is enhanced by a resistance-optimized LC resonance effect. We perform an equivalent circuit analysis to determine the optimal value of a matching load resistance for 112-Gbaud PAM4 operation over wide temperature range of 25∼70 °C. By fabricating the lumped-EML submodule, we experimentally show that a 3-dB bandwidth of over 70 GHz can be obtained up to 70 °C by optimizing the matching load resistance as well as lengths of bondwires, even with a lumped-EML featuring a moderate EAM length of 120 μm. Consequently, the fabricated lumped-EML submodule revealed clear optical eye patterns under 112-Gbaud PAM4 modulation after 2-km SMF transmissions.

Original languageEnglish
Pages (from-to)8050-8057
Number of pages8
JournalJournal of Lightwave Technology
Volume43
Issue number17
DOIs
StatePublished - 2025

Keywords

  • 4-level pulse amplitude modulation (PAM4)
  • LC resonance
  • data center
  • electro-absorption modulator-integrated lasers (EML)
  • equivalent circuit

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