Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

Young Woo Ok; Ajeet Rohatgi; Yeon Ho Kil; Sung Eun Park; Dong Hwan Kim; Joon Sung Lee; Chel Jong Choi

doi:10.1109/LED.2010.2098840

Abnormal dopant distribution in POCl₃-diffused N⁺ emitter of textured silicon solar cells

Young Woo Ok^*
, Ajeet Rohatgi
, Yeon Ho Kil
, Sung Eun Park
, Dong Hwan Kim
, Joon Sung Lee
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

17 Scopus citations

Abstract

We investigated 2-D dopant distribution in a POCl₃ -diffused n⁺ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n⁺ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original language	English
Article number	5680936
Pages (from-to)	351-353
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2098840
State	Published - 2011.03

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Junction
selective chemical etching
Si interstitial
solar cells
transmission electron microscopy (TEM)

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/LED.2010.2098840

Cite this

@article{4d9ae9dee8604b18be9f8f41dbd6c085,

title = "Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells",

abstract = "We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.",

keywords = "Junction, selective chemical etching, Si interstitial, solar cells, transmission electron microscopy (TEM)",

author = "Ok, \{Young Woo\} and Ajeet Rohatgi and Kil, \{Yeon Ho\} and Park, \{Sung Eun\} and Kim, \{Dong Hwan\} and Lee, \{Joon Sung\} and Choi, \{Chel Jong\}",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2098840",

language = "English",

volume = "32",

pages = "351--353",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "3",

}

TY - JOUR

T1 - Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

AU - Ok, Young Woo

AU - Rohatgi, Ajeet

AU - Kil, Yeon Ho

AU - Park, Sung Eun

AU - Kim, Dong Hwan

AU - Lee, Joon Sung

AU - Choi, Chel Jong

PY - 2011/3

Y1 - 2011/3

N2 - We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

AB - We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

KW - Junction

KW - selective chemical etching

KW - Si interstitial

KW - solar cells

KW - transmission electron microscopy (TEM)

UR - https://www.scopus.com/pages/publications/79951941736

U2 - 10.1109/LED.2010.2098840

DO - 10.1109/LED.2010.2098840

M3 - Journal article

AN - SCOPUS:79951941736

SN - 0741-3106

VL - 32

SP - 351

EP - 353

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5680936

ER -