Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism

Chel Jong Choi; Tae Yeon Seong; Key Min Lee; Joo Hyoung Lee; Young Jin Park; Hi Deok Lee

doi:10.1109/55.992834

Abnormal junction profile of silicided p⁺/n shallow junctions: A leakage mechanism

Chel Jong Choi
, Tae Yeon Seong^*
, Key Min Lee
, Joo Hyoung Lee
, Young Jin Park
, Hi Deok Lee

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology
SK Corporation
IEEE
Chungnam National University

Research output: Contribution to journal › Journal article › peer-review

13 Scopus citations

Abstract

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p⁺/n shallow junctions.

Original language	English
Pages (from-to)	188-190
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	4
DOIs	https://doi.org/10.1109/55.992834
State	Published - 2002.04

Keywords

Co-salicidation
Junction
Leakage current
Selective chemical etching
Shallow trench isolation (STI)
Transient enhanced diffusion (TED)
Transmission electron microscopy (TEM)

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10.1109/55.992834

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@article{003cd8e0770d4590a008946a230a1da2,

title = "Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism",

abstract = "The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.",

keywords = "Co-salicidation, Junction, Leakage current, Selective chemical etching, Shallow trench isolation (STI), Transient enhanced diffusion (TED), Transmission electron microscopy (TEM)",

author = "Choi, \{Chel Jong\} and Seong, \{Tae Yeon\} and Lee, \{Key Min\} and Lee, \{Joo Hyoung\} and Park, \{Young Jin\} and Lee, \{Hi Deok\}",

year = "2002",

month = apr,

doi = "10.1109/55.992834",

language = "English",

volume = "23",

pages = "188--190",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

T1 - Abnormal junction profile of silicided p+/n shallow junctions

T2 - A leakage mechanism

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Lee, Key Min

AU - Lee, Joo Hyoung

AU - Park, Young Jin

AU - Lee, Hi Deok

PY - 2002/4

Y1 - 2002/4

N2 - The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.

AB - The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+/n shallow junctions.

KW - Co-salicidation

KW - Junction

KW - Leakage current

KW - Selective chemical etching

KW - Shallow trench isolation (STI)

KW - Transient enhanced diffusion (TED)

KW - Transmission electron microscopy (TEM)

UR - https://www.scopus.com/pages/publications/0036541716

U2 - 10.1109/55.992834

DO - 10.1109/55.992834

M3 - Journal article

AN - SCOPUS:0036541716

SN - 0741-3106

VL - 23

SP - 188

EP - 190

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Abnormal junction profile of silicided p⁺/n shallow junctions: A leakage mechanism

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