Abstract
We investigate the activation energy and carrier dynamics of CdTe/ZnTe quantum dots (QDs) grown on GaAs and Si substrates. The activation energy of the electrons confined in QDs on the Si substrate, as obtained from the temperature-dependent photoluminescence (PL) spectra, is lower than that of electrons confined in QDs on the GaAs substrate. Time-resolved PL measurements used to study the carrier dynamics show shorter exciton lifetimes for QDs on the Si substrate. This behavior is attributed to the fact that defects and dislocations in the QDs on the Si substrate provide nonradiative channels.
| Original language | English |
|---|---|
| Pages (from-to) | 5378-5381 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2012.06.1 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Activation energy
- Cadmium telluride
- Carrier dynamics
- Gallium arsenide
- Photoluminescence
- Quantum dots
- Silicon
- Substrates
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