@inproceedings{79fa58ac07444a63a7691bd9b9bcb44e,
title = "Advanced characterization technique for the extraction of intrinsic effective mobility in ultra-thin-body strained SOI MOSFETs",
abstract = "An accurate method of extracting intrinsic effective mobility is proposed which considers the parasitic component and floating-body effects. The technique was verified with fabricated ultra-thin body (UTB) strained silicon-on-insulator (sSOI) MOSFETs. The accurate mobility values extracted using the newly proposed technique, were then comparatively analyzed. This novel method corrects the underestimation of mobility produced by the parasitic component and the overestimated mobility resulting from the floating-body effects.",
keywords = "Effective Mobility, Floating-Body Effects, Qinv Correction Factor, Strained SOI (sSOI), Ultra-thin-body (UTB)",
author = "Myungsoo Seo and Hagyoul Bae and Jeon, \{Chang Hoon\} and Lee, \{Byung Hyun\} and Choi, \{Yang Kyu\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 ; Conference date: 16-10-2017 Through 18-10-2017",
year = "2017",
month = jul,
day = "2",
doi = "10.1109/S3S.2017.8309238",
language = "English",
series = "2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017",
}