AgGaS₂-type photocatalysts for hydrogen production under visible light: Effects of post-synthetic H₂S treatment

Bulky AgGaS₂ was synthesized as a p-type semiconductor photocatalyst by a conventional solid state reaction under N₂ flow for hydrogen production under visible light. To remove impurity phases involved in the synthesized material and improve crystallinity, the material was treated at various temperatures of 873-1123 K under H₂S flow. Impurity phases were identified as β-Ga₂O₃ and Ag₉GaS₆ with the cell refinements of XRD and the local coordination structure around gallium atom in AgGaS₂ was investigated by EXAFS. As the H₂S-treatment temperature increased, the contribution from impurity phases was diminished. When the temperature reached 1123 K, the impurity phases were completely removed and the material showed the highest photocatalytic activity. Thus, the post-synthetic H₂S treatment could be applied for the synthesis of sulfide-type photocatalysts with high activity.