Ambipolar carrier injection characteristics of erbium-silicided n-type schottky barrier metal-oxide-semiconductor field-effect transistors

Erbium-silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) with a 5nm gate oxide thickness are manufactured. Their on/off-current ratio is higher than 10⁵ with low leakage current less than 10nA/um. The abnormal increase of drain current with a negative gate voltage is explained by the hole carrier injection from drain into the channel. In SB-MOSFETs, ambipolar carriers, i.e., electrons and holes, can be injected into the channel depending on gate voltage polarity.