An in-plane GaAs single-electron memory cell operating at 77 K

K. H. Yoo; J. W. Park; Kim Jinhee; K. S. Park; S. C. Oh; J. O. Lee; J. J. Kim; J. B. Choi; J. J. Lee

doi:10.1063/1.123761

An in-plane GaAs single-electron memory cell operating at 77 K

K. H. Yoo^*
, J. W. Park
, Kim Jinhee
, K. S. Park
, S. C. Oh
, J. O. Lee
, J. J. Kim
, J. B. Choi
, J. J. Lee

^*Corresponding author for this work

Department of Physics

Korea Research Institute of Standards and Science
Chungbuk National University
Jeonbuk National University
Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

Original language	English
Pages (from-to)	2073-2075
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	14
DOIs	https://doi.org/10.1063/1.123761
State	Published - 1999.04.5

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10.1063/1.123761

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title = "An in-plane GaAs single-electron memory cell operating at 77 K",

abstract = "An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.",

author = "Yoo, \{K. H.\} and Park, \{J. W.\} and Kim Jinhee and Park, \{K. S.\} and Oh, \{S. C.\} and Lee, \{J. O.\} and Kim, \{J. J.\} and Choi, \{J. B.\} and Lee, \{J. J.\}",

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doi = "10.1063/1.123761",

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T1 - An in-plane GaAs single-electron memory cell operating at 77 K

AU - Yoo, K. H.

AU - Park, J. W.

AU - Jinhee, Kim

AU - Park, K. S.

AU - Oh, S. C.

AU - Lee, J. O.

AU - Kim, J. J.

AU - Choi, J. B.

AU - Lee, J. J.

PY - 1999/4/5

Y1 - 1999/4/5

N2 - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

AB - An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

UR - https://www.scopus.com/pages/publications/0032621371

U2 - 10.1063/1.123761

DO - 10.1063/1.123761

M3 - Journal article

AN - SCOPUS:0032621371

SN - 0003-6951

VL - 74

SP - 2073

EP - 2075

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

An in-plane GaAs single-electron memory cell operating at 77 K

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