An optimum strategy for the low voltage operation of the mechanical switch

Byung Hyun Lee; Min Ho Kang; Jae Hur; Dae Chul Ahn; Dong Il Lee; Hagyoul Bae; Yang Kyu Choi

doi:10.1109/NANO.2015.7388810

An optimum strategy for the low voltage operation of the mechanical switch

Byung Hyun Lee
, Min Ho Kang
, Jae Hur
, Dae Chul Ahn
, Dong Il Lee
, Hagyoul Bae
, Yang Kyu Choi^*

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology
Samsung
National NanoFab Center

Research output: Contribution to conference › Conference paper › peer-review

Abstract

A study of the effective scaling of the pull-in operation voltage (VP) in a nano electro-mechanical (NEM) switch device was carried out. The atomic layer deposition (ALD) technique which can stably build a gap was used to form a sub-10 nm nanogap without stiction. Here, the use of a dielectric layer with a high dielectric constant (high-k) effectively reduced VP via an increase in the electrostatic force. The geometric dependency was analyzed in an experiment with various dimensions. Also, the change of VP was interpreted by numerical equation-based modeling. Thus, this study suggests a guideline related to the feasibility of the low-voltage operation and effective scaling down of a NEM switch.

Original language	English
Title of host publication	IEEE-NANO 2015 - 15th International Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1082-1086
Number of pages	5
ISBN (Electronic)	9781467381550
DOIs	https://doi.org/10.1109/NANO.2015.7388810
State	Published - 2015
Event	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy Duration: 2015.07.27 → 2015.07.30

Publication series

Name	IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference	15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Country/Territory	Italy
City	Rome
Period	15.07.27 → 15.07.30

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10.1109/NANO.2015.7388810

Cite this

Lee, B. H., Kang, M. H., Hur, J., Ahn, D. C., Lee, D. I., Bae, H., & Choi, Y. K. (2015). An optimum strategy for the low voltage operation of the mechanical switch. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 1082-1086). Article 7388810 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388810

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title = "An optimum strategy for the low voltage operation of the mechanical switch",

abstract = "A study of the effective scaling of the pull-in operation voltage (VP) in a nano electro-mechanical (NEM) switch device was carried out. The atomic layer deposition (ALD) technique which can stably build a gap was used to form a sub-10 nm nanogap without stiction. Here, the use of a dielectric layer with a high dielectric constant (high-k) effectively reduced VP via an increase in the electrostatic force. The geometric dependency was analyzed in an experiment with various dimensions. Also, the change of VP was interpreted by numerical equation-based modeling. Thus, this study suggests a guideline related to the feasibility of the low-voltage operation and effective scaling down of a NEM switch.",

author = "Lee, \{Byung Hyun\} and Kang, \{Min Ho\} and Jae Hur and Ahn, \{Dae Chul\} and Lee, \{Dong Il\} and Hagyoul Bae and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 ; Conference date: 27-07-2015 Through 30-07-2015",

year = "2015",

doi = "10.1109/NANO.2015.7388810",

language = "English",

series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, BH, Kang, MH, Hur, J, Ahn, DC, Lee, DI, Bae, H & Choi, YK 2015, An optimum strategy for the low voltage operation of the mechanical switch. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388810, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 1082-1086, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 15.07.27. https://doi.org/10.1109/NANO.2015.7388810

An optimum strategy for the low voltage operation of the mechanical switch. / Lee, Byung Hyun; Kang, Min Ho; Hur, Jae et al.
IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 1082-1086 7388810 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Contribution to conference › Conference paper › peer-review

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T1 - An optimum strategy for the low voltage operation of the mechanical switch

AU - Lee, Byung Hyun

AU - Kang, Min Ho

AU - Hur, Jae

AU - Ahn, Dae Chul

AU - Lee, Dong Il

AU - Bae, Hagyoul

AU - Choi, Yang Kyu

PY - 2015

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N2 - A study of the effective scaling of the pull-in operation voltage (VP) in a nano electro-mechanical (NEM) switch device was carried out. The atomic layer deposition (ALD) technique which can stably build a gap was used to form a sub-10 nm nanogap without stiction. Here, the use of a dielectric layer with a high dielectric constant (high-k) effectively reduced VP via an increase in the electrostatic force. The geometric dependency was analyzed in an experiment with various dimensions. Also, the change of VP was interpreted by numerical equation-based modeling. Thus, this study suggests a guideline related to the feasibility of the low-voltage operation and effective scaling down of a NEM switch.

AB - A study of the effective scaling of the pull-in operation voltage (VP) in a nano electro-mechanical (NEM) switch device was carried out. The atomic layer deposition (ALD) technique which can stably build a gap was used to form a sub-10 nm nanogap without stiction. Here, the use of a dielectric layer with a high dielectric constant (high-k) effectively reduced VP via an increase in the electrostatic force. The geometric dependency was analyzed in an experiment with various dimensions. Also, the change of VP was interpreted by numerical equation-based modeling. Thus, this study suggests a guideline related to the feasibility of the low-voltage operation and effective scaling down of a NEM switch.

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EP - 1086

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015

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ER -

Lee BH, Kang MH, Hur J, Ahn DC, Lee DI, Bae H et al. An optimum strategy for the low voltage operation of the mechanical switch. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 1082-1086. 7388810. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). doi: 10.1109/NANO.2015.7388810

An optimum strategy for the low voltage operation of the mechanical switch

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