Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

Kihyun Lee; Kyungsub Jung; Seunghoo Song; Yongsug Suh; Changwoo Kim; Hyoyol Yoo; Sunsoon Park

doi:10.1109/IPEC.2014.6869803

Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

Kihyun Lee
, Kyungsub Jung
, Seunghoo Song
, Yongsug Suh
, Changwoo Kim
, Hyoyol Yoo
, Sunsoon Park

Department of Electrical Engineering

Research output: Contribution to conference › Conference paper › peer-review

7 Scopus citations

Abstract

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of press-pack type IGCT, module type IGBT, press-pack type IEGT, and press-pack type IGBT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack IGCT type semiconductor device has the highest efficiency.

Original language	English
Title of host publication	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Publisher	IEEE Computer Society
Pages	1646-1653
Number of pages	8
ISBN (Print)	9781479927050
DOIs	https://doi.org/10.1109/IPEC.2014.6869803
State	Published - 2014
Event	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 - Hiroshima, Japan Duration: 2014.05.18 → 2014.05.21

Publication series

Name	2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Conference

Conference	7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
Country/Territory	Japan
City	Hiroshima
Period	14.05.18 → 14.05.21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Losses
medium voltage
multi-level system
power semiconductor
three-level neutral point clamped inverter
voltage source converter (VSC)
wind turbine

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/IPEC.2014.6869803

Cite this

Lee, K., Jung, K., Song, S., Suh, Y., Kim, C., Yoo, H., & Park, S. (2014). Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 (pp. 1646-1653). Article 6869803 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). IEEE Computer Society. https://doi.org/10.1109/IPEC.2014.6869803

@inproceedings{b3d4056666f6405a8e70531a14f5b8c0,

title = "Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines",

abstract = "This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of press-pack type IGCT, module type IGBT, press-pack type IEGT, and press-pack type IGBT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack IGCT type semiconductor device has the highest efficiency.",

keywords = "Losses, medium voltage, multi-level system, power semiconductor, three-level neutral point clamped inverter, voltage source converter (VSC), wind turbine",

author = "Kihyun Lee and Kyungsub Jung and Seunghoo Song and Yongsug Suh and Changwoo Kim and Hyoyol Yoo and Sunsoon Park",

year = "2014",

doi = "10.1109/IPEC.2014.6869803",

language = "English",

isbn = "9781479927050",

series = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",

publisher = "IEEE Computer Society",

pages = "1646--1653",

booktitle = "2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014",

note = "7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014 ; Conference date: 18-05-2014 Through 21-05-2014",

}

Lee, K, Jung, K, Song, S, Suh, Y, Kim, C, Yoo, H & Park, S 2014, Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines. in 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014., 6869803, 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, IEEE Computer Society, pp. 1646-1653, 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014, Hiroshima, Japan, 14.05.18. https://doi.org/10.1109/IPEC.2014.6869803

Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines. / Lee, Kihyun; Jung, Kyungsub; Song, Seunghoo et al.
2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society, 2014. p. 1646-1653 6869803 (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

AU - Lee, Kihyun

AU - Jung, Kyungsub

AU - Song, Seunghoo

AU - Suh, Yongsug

AU - Kim, Changwoo

AU - Yoo, Hyoyol

AU - Park, Sunsoon

PY - 2014

Y1 - 2014

N2 - This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of press-pack type IGCT, module type IGBT, press-pack type IEGT, and press-pack type IGBT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack IGCT type semiconductor device has the highest efficiency.

AB - This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of press-pack type IGCT, module type IGBT, press-pack type IEGT, and press-pack type IGBT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack IGCT type semiconductor device has the highest efficiency.

KW - Losses

KW - medium voltage

KW - multi-level system

KW - power semiconductor

KW - three-level neutral point clamped inverter

KW - voltage source converter (VSC)

KW - wind turbine

UR - https://www.scopus.com/pages/publications/84906708287

U2 - 10.1109/IPEC.2014.6869803

DO - 10.1109/IPEC.2014.6869803

M3 - Conference paper

AN - SCOPUS:84906708287

SN - 9781479927050

T3 - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

SP - 1646

EP - 1653

BT - 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

PB - IEEE Computer Society

T2 - 7th International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Y2 - 18 May 2014 through 21 May 2014

ER -

Lee K, Jung K, Song S, Suh Y, Kim C, Yoo H et al. Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines. In 2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014. IEEE Computer Society. 2014. p. 1646-1653. 6869803. (2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014). doi: 10.1109/IPEC.2014.6869803

Analysis and comparison of high power semiconductor device losses in 5MW PMSG MV wind turbines

Abstract

Publication series

Conference

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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