Abstract
GaN-based light-emitting diodes (LEDs) degraded by the generation of deep-level states were analyzed by means of temperature dependent current-voltage measurements. After accelerated aging test of LEDs, the density of deep-level states was found to increase by a factor of ∼5.0, which resulted in an increase in junction temperature of 7°C associated with increased nonradiative recombination. The optical microscopy images of LEDs under zero bias (left) and 50 μA (right).
| Original language | English |
|---|---|
| Pages (from-to) | 1764-1768 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 211 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2014.08 |
Keywords
- deep levels
- GaN
- light-emitting diodes
- variable range hopping
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Electrical & Electronic
- Engineering - Petroleum
- Physics & Astronomy
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