Analysis of interface trap states at Schottky diode by using equivalent circuit modeling

The authors have developed a new equivalent circuit model to analyze the charging dynamics of the interface states in Schottky barrier diodes at reverse bias condition. Trap density and the capture/emission times are extracted by incorporating the measured ac admittance of erbium silicide Schottky diode with the newly developed equivalent circuit model. The extracted trap density is 1.5× 1012 cm-2 eV-1 and the capture and emission transition times are 19 and 5.9 μs, respectively. Trap density decreases to 6.1× 109 cm-2 eV-1 after N2 annealing.