Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the systems developed. The evaluation of HPEM (High Power Electromagnetics) has been mainly carried out in the system level, and the case of failure analysis on the device is very rare. If the electronic components (semiconductor) are exposed to HPEM, the semiconductor will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductor is vulnerable to external stress factor such as the coupled electromagnetic pulse. By injecting Damped Sinusoidal Pulse to the semiconductor devices, were observed the increase of leakage current and the physical damage.