Abstract
We manufactured erbium-silicided Schottky diodes on n -type and p -type silicon substrates to determine the Schottky barrier heights for electrons and holes, respectively. The effective barrier heights were extracted from the current-voltage-temperature characteristics of the Schottky diodes in reverse-bias condition. The barrier heights were obtained as a function of temperature, decreasing with the decrease of temperature. Low effective barrier heights at low temperature may be due to the trap-assisted current at the erbium silicide/silicon Schottky junction. The temperature-independent barrier heights for electrons and holes were evaluated to be 0.39 and 0.69 eV, respectively, at high temperature by fitting the effective barrier heights as a function of temperature. In this case, the carrier conduction mechanism can be explained by the pure thermionic emission model.
| Original language | English |
|---|---|
| Pages (from-to) | 137-140 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 26 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2008 |
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