Application of IGCT in high power rectifiers

Yongsug Suh; Peter Steimer

doi:10.1109/08IAS.2008.321

Application of IGCT in high power rectifiers

Yongsug Suh^*
, Peter Steimer

^*Corresponding author for this work

Department of Electrical Engineering

ABB Group

Research output: Contribution to conference › Conference paper › peer-review

2 Scopus citations

Abstract

This paper investigates the possibility of applying IGCT(Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down dc/dc converter. As compared to 2-level operation, half the input dc voltage and twice the effective switching frequency of 3-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than 2-level case. A laboratory proto-type of 5kA, 3.1MW rectifier has been simulated and tested to confirm the feasibility of IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high frequency harmonics, thereby avoiding the high frequency harmonic related problems found in IGBT based high current rectifiers. IGCT would play a significant role to improve the cost-effective performance and reliability in low and medium ranged high current high power rectifier systems.

Original language	English
Title of host publication	2008 IEEE Industry Applications Society Annual Meeting, IAS'08
DOIs	https://doi.org/10.1109/08IAS.2008.321
State	Published - 2008
Event	2008 IEEE Industry Applications Society Annual Meeting, IAS'08 - Edmonton, AB, Canada Duration: 2008.10.5 → 2008.10.9

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
ISSN (Print)	0197-2618

Conference

Conference	2008 IEEE Industry Applications Society Annual Meeting, IAS'08
Country/Territory	Canada
City	Edmonton, AB
Period	08.10.5 → 08.10.9

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

3-level dc/dc converter
AC-DC power conversion
IGCT
Medium-voltage
Rectifier

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Computer Science & Information Systems
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/08IAS.2008.321

Cite this

@inproceedings{c218370e41de480e85bd6f54ad988f77,

title = "Application of IGCT in high power rectifiers",

abstract = "This paper investigates the possibility of applying IGCT(Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down dc/dc converter. As compared to 2-level operation, half the input dc voltage and twice the effective switching frequency of 3-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than 2-level case. A laboratory proto-type of 5kA, 3.1MW rectifier has been simulated and tested to confirm the feasibility of IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high frequency harmonics, thereby avoiding the high frequency harmonic related problems found in IGBT based high current rectifiers. IGCT would play a significant role to improve the cost-effective performance and reliability in low and medium ranged high current high power rectifier systems.",

keywords = "3-level dc/dc converter, AC-DC power conversion, IGCT, Medium-voltage, Rectifier",

author = "Yongsug Suh and Peter Steimer",

year = "2008",

doi = "10.1109/08IAS.2008.321",

language = "English",

isbn = "9781424422791",

series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

booktitle = "2008 IEEE Industry Applications Society Annual Meeting, IAS'08",

note = "2008 IEEE Industry Applications Society Annual Meeting, IAS'08 ; Conference date: 05-10-2008 Through 09-10-2008",

}

TY - GEN

T1 - Application of IGCT in high power rectifiers

AU - Suh, Yongsug

AU - Steimer, Peter

PY - 2008

Y1 - 2008

N2 - This paper investigates the possibility of applying IGCT(Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down dc/dc converter. As compared to 2-level operation, half the input dc voltage and twice the effective switching frequency of 3-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than 2-level case. A laboratory proto-type of 5kA, 3.1MW rectifier has been simulated and tested to confirm the feasibility of IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high frequency harmonics, thereby avoiding the high frequency harmonic related problems found in IGBT based high current rectifiers. IGCT would play a significant role to improve the cost-effective performance and reliability in low and medium ranged high current high power rectifier systems.

AB - This paper investigates the possibility of applying IGCT(Integrated Gate Commutated Thyristor) into high current high power rectifier systems. The optimal power converter topology that fully utilizes the functionality of IGCT is proposed. The proposed power converter consists of a front-end diode rectifier and 3-level step-down dc/dc converter. As compared to 2-level operation, half the input dc voltage and twice the effective switching frequency of 3-level operation can provide a wider operation range of continuous conduction mode resulting in a higher average output current of less ripple size than 2-level case. A laboratory proto-type of 5kA, 3.1MW rectifier has been simulated and tested to confirm the feasibility of IGCT in the proposed power converter topology. The proposed solution generates a relatively smooth output dc current with less contents of high frequency harmonics, thereby avoiding the high frequency harmonic related problems found in IGBT based high current rectifiers. IGCT would play a significant role to improve the cost-effective performance and reliability in low and medium ranged high current high power rectifier systems.

KW - 3-level dc/dc converter

KW - AC-DC power conversion

KW - IGCT

KW - Medium-voltage

KW - Rectifier

UR - https://www.scopus.com/pages/publications/57949098315

U2 - 10.1109/08IAS.2008.321

DO - 10.1109/08IAS.2008.321

M3 - Conference paper

AN - SCOPUS:57949098315

SN - 9781424422791

T3 - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

BT - 2008 IEEE Industry Applications Society Annual Meeting, IAS'08

T2 - 2008 IEEE Industry Applications Society Annual Meeting, IAS'08

Y2 - 5 October 2008 through 9 October 2008

ER -

Application of IGCT in high power rectifiers

Abstract

Publication series

Conference

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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