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Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

  • David S. Meyaard*
  • , Guan Bo Lin
  • , Qifeng Shan
  • , Jaehee Cho
  • , E. Fred Schubert
  • , Hyun Wook Shim
  • , Min Ho Kim
  • , Cheolsoo Sone
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Samsung

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.

Original languageEnglish
Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
StatePublished - 2012
Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
Duration: 2012.05.62012.05.11

Publication series

Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

Conference

Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period12.05.612.05.11

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