Skip to main navigation Skip to search Skip to main content

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

  • David S. Meyaard
  • , Guan Bo Lin
  • , Qifeng Shan
  • , Jaehee Cho
  • , E. Fred Schubert*
  • , Hyun Wook Shim
  • , Min Ho Kim
  • , Cheolsoo Sone
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Samsung

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We present experimental evidence that the asymmetry in carrier concentration and mobility cause efficiency droop in GaInN/GaN pn-junction LEDs. Efficiency droop is measured for a wide range of temperatures, showing increased droop at 80 K.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2012
PublisherOptical Society of America (OSA)
PagesJW3L.2
ISBN (Print)9781557529435
DOIs
StatePublished - 2012
EventCLEO: Applications and Technology, CLEO_AT 2012 - San Jose, CA, United States
Duration: 2012.05.62012.05.11

Publication series

NameCLEO: Applications and Technology, CLEO_AT 2012

Conference

ConferenceCLEO: Applications and Technology, CLEO_AT 2012
Country/TerritoryUnited States
CitySan Jose, CA
Period12.05.612.05.11

Fingerprint

Dive into the research topics of 'Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes'. Together they form a unique fingerprint.

Cite this