Atomic and electronic structures of N-incorporated Si oxides

Sukmin Jeong; Atsushi Oshiyama

doi:10.1103/PhysRevLett.86.3574

Atomic and electronic structures of N-incorporated Si oxides

Sukmin Jeong
, Atsushi Oshiyama

Department of Physics

University of Tsukuba

Research output: Contribution to journal › Journal article › peer-review

31 Scopus citations

Abstract

Bond configurations around N in SiO₂ were explored using a first-principles total-energy method. The energetics, charge states, and electronic structures for the total-energy optimized atomic configurations were mapped out. Results indicate that the coexistence of N and H is crucial for better electrical properties of Si oxynitrides.

Original language	English
Pages (from-to)	3574-3577
Number of pages	4
Journal	Physical Review Letters
Volume	86
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.86.3574
State	Published - 2001.04.16

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10.1103/PhysRevLett.86.3574

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abstract = "Bond configurations around N in SiO2 were explored using a first-principles total-energy method. The energetics, charge states, and electronic structures for the total-energy optimized atomic configurations were mapped out. Results indicate that the coexistence of N and H is crucial for better electrical properties of Si oxynitrides.",

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AB - Bond configurations around N in SiO2 were explored using a first-principles total-energy method. The energetics, charge states, and electronic structures for the total-energy optimized atomic configurations were mapped out. Results indicate that the coexistence of N and H is crucial for better electrical properties of Si oxynitrides.

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DO - 10.1103/PhysRevLett.86.3574

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JO - Physical Review Letters

JF - Physical Review Letters

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Atomic and electronic structures of N-incorporated Si oxides

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