Atomic layer deposition of GeTe films using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and methanol

Taehong Gwon; Taeyong Eom; Sijung Yoo; Han Koo Lee; Deok Yong Cho; Moo Sung Kim; Iain Buchanan; Manchao Xiao; Sergei Ivanov; Cheol Seong Hwang

doi:10.1021/acs.chemmater.6b03704

Atomic layer deposition of GeTe films using Ge{N[Si(CH₃)₃]₂}₂, {(CH₃)₃Si}₂Te, and methanol

Taehong Gwon
, Taeyong Eom
, Sijung Yoo
, Han Koo Lee
, Deok Yong Cho
, Moo Sung Kim
, Iain Buchanan
, Manchao Xiao
, Sergei Ivanov
, Cheol Seong Hwang^*

^*Corresponding author for this work

Department of Physics

Seoul National University
Pohang University of Science and Technology
Air Products Korea
Air Products and Chemicals, Inc.

Research output: Contribution to journal › Journal article › peer-review

39 Scopus citations

Abstract

In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH₃)₃)₂)₂, in which Ge is in +2 oxidation state, and ((CH₃)₃Si)₂Te were used as Ge and Te precursors, respectively. GeTe films were deposited at a low wafer temperature of 70-120 °C. To improve low reactivity of Ge(N(Si(CH₃)₃)₂)₂ toward ALD-type reaction with ((CH₃)₃Si)₂Te, methanol vapor was coinjected with the Ge precursor and the Te precursor to form a reactive Ge intermediate having methoxy ligands and a Te intermediate having hydrogen ligands in the gas phase. This chemistry-specific ALD process deposited films various compositional GeTe alloys including the desired composition of Ge:Te = 1:1. Detailed mechanism study on the probable chemical reactions and film composition analysis revealed that the film growth could proceed via the formations of GeTe₂, GeTe, and Ge₂Te phases depending on the relative Ge-precursor concentration during the ALD process. The films showed feasibility for phase-change memory applications.

Original language	English
Pages (from-to)	7158-7166
Number of pages	9
Journal	Chemistry of Materials
Volume	28
Issue number	19
DOIs	https://doi.org/10.1021/acs.chemmater.6b03704
State	Published - 2016.10.11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Chemical
Chemistry

Access to Document

10.1021/acs.chemmater.6b03704

Cite this

@article{7c10e240a8b64cfbb12efe1226501a97,

title = "Atomic layer deposition of GeTe films using Ge\{N[Si(CH3)3]2\}2, \{(CH3)3Si\}2Te, and methanol",

abstract = "In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH3)3)2)2, in which Ge is in +2 oxidation state, and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. GeTe films were deposited at a low wafer temperature of 70-120 °C. To improve low reactivity of Ge(N(Si(CH3)3)2)2 toward ALD-type reaction with ((CH3)3Si)2Te, methanol vapor was coinjected with the Ge precursor and the Te precursor to form a reactive Ge intermediate having methoxy ligands and a Te intermediate having hydrogen ligands in the gas phase. This chemistry-specific ALD process deposited films various compositional GeTe alloys including the desired composition of Ge:Te = 1:1. Detailed mechanism study on the probable chemical reactions and film composition analysis revealed that the film growth could proceed via the formations of GeTe2, GeTe, and Ge2Te phases depending on the relative Ge-precursor concentration during the ALD process. The films showed feasibility for phase-change memory applications.",

author = "Taehong Gwon and Taeyong Eom and Sijung Yoo and Lee, \{Han Koo\} and Cho, \{Deok Yong\} and Kim, \{Moo Sung\} and Iain Buchanan and Manchao Xiao and Sergei Ivanov and Hwang, \{Cheol Seong\}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = oct,

day = "11",

doi = "10.1021/acs.chemmater.6b03704",

language = "English",

volume = "28",

pages = "7158--7166",

journal = "Chemistry of Materials",

issn = "0897-4756",

number = "19",

}

TY - JOUR

T1 - Atomic layer deposition of GeTe films using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and methanol

AU - Gwon, Taehong

AU - Eom, Taeyong

AU - Yoo, Sijung

AU - Lee, Han Koo

AU - Cho, Deok Yong

AU - Kim, Moo Sung

AU - Buchanan, Iain

AU - Xiao, Manchao

AU - Ivanov, Sergei

AU - Hwang, Cheol Seong

PY - 2016/10/11

Y1 - 2016/10/11

N2 - In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH3)3)2)2, in which Ge is in +2 oxidation state, and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. GeTe films were deposited at a low wafer temperature of 70-120 °C. To improve low reactivity of Ge(N(Si(CH3)3)2)2 toward ALD-type reaction with ((CH3)3Si)2Te, methanol vapor was coinjected with the Ge precursor and the Te precursor to form a reactive Ge intermediate having methoxy ligands and a Te intermediate having hydrogen ligands in the gas phase. This chemistry-specific ALD process deposited films various compositional GeTe alloys including the desired composition of Ge:Te = 1:1. Detailed mechanism study on the probable chemical reactions and film composition analysis revealed that the film growth could proceed via the formations of GeTe2, GeTe, and Ge2Te phases depending on the relative Ge-precursor concentration during the ALD process. The films showed feasibility for phase-change memory applications.

AB - In this report, a new method to deposit GeTe thin film by atomic layer deposition (ALD) is described. Ge(N(Si(CH3)3)2)2, in which Ge is in +2 oxidation state, and ((CH3)3Si)2Te were used as Ge and Te precursors, respectively. GeTe films were deposited at a low wafer temperature of 70-120 °C. To improve low reactivity of Ge(N(Si(CH3)3)2)2 toward ALD-type reaction with ((CH3)3Si)2Te, methanol vapor was coinjected with the Ge precursor and the Te precursor to form a reactive Ge intermediate having methoxy ligands and a Te intermediate having hydrogen ligands in the gas phase. This chemistry-specific ALD process deposited films various compositional GeTe alloys including the desired composition of Ge:Te = 1:1. Detailed mechanism study on the probable chemical reactions and film composition analysis revealed that the film growth could proceed via the formations of GeTe2, GeTe, and Ge2Te phases depending on the relative Ge-precursor concentration during the ALD process. The films showed feasibility for phase-change memory applications.

UR - https://www.scopus.com/pages/publications/84991316091

U2 - 10.1021/acs.chemmater.6b03704

DO - 10.1021/acs.chemmater.6b03704

M3 - Journal article

AN - SCOPUS:84991316091

SN - 0897-4756

VL - 28

SP - 7158

EP - 7166

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 19

ER -