Atomic rearrangements in HfO2/Si1-xGex interfaces

Deok Yong Cho; S. J. Oh; Tae Joo Park; Cheol Seong Hwang

doi:10.1063/1.2357341

Atomic rearrangements in HfO₂/Si_1-xGe_x interfaces

Deok Yong Cho^*
, S. J. Oh
, Tae Joo Park
, Cheol Seong Hwang

^*Corresponding author for this work

Department of Physics

Seoul National University

Research output: Contribution to journal › Journal article › peer-review

6 Scopus citations

Abstract

Atomic exchanges across the interface between a HfO₂ thin film and strained semiconducting Si_1-xGe_x (x=0.1, 0.2, and 0.3) was investigated by extended x-ray absorption fine structures. Atomic layer deposition of HfO₂ films on epitaxial Si_1-xGe_x produces a Hf-silicate (Hf-O-Si bond) phase at the interface. Also O atoms diffuse into the Si_1-xGe_x alloy to form Ge oxide in a segregated phase. This tendency becomes evident when the Ge concentration of the substrate becomes higher or when HfO₂ is deposited and these samples are compared to the pure Si_1-xGe_x substrates which have been exposed to ambient atmosphere.

Original language	English
Article number	132904
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2357341
State	Published - 2006

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title = "Atomic rearrangements in HfO2/Si1-xGex interfaces",

abstract = "Atomic exchanges across the interface between a HfO2 thin film and strained semiconducting Si1-xGex (x=0.1, 0.2, and 0.3) was investigated by extended x-ray absorption fine structures. Atomic layer deposition of HfO2 films on epitaxial Si1-xGex produces a Hf-silicate (Hf-O-Si bond) phase at the interface. Also O atoms diffuse into the Si1-xGex alloy to form Ge oxide in a segregated phase. This tendency becomes evident when the Ge concentration of the substrate becomes higher or when HfO2 is deposited and these samples are compared to the pure Si1-xGex substrates which have been exposed to ambient atmosphere.",

author = "Cho, \{Deok Yong\} and Oh, \{S. J.\} and Park, \{Tae Joo\} and Hwang, \{Cheol Seong\}",

year = "2006",

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language = "English",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Atomic rearrangements in HfO2/Si1-xGex interfaces

AU - Cho, Deok Yong

AU - Oh, S. J.

AU - Park, Tae Joo

AU - Hwang, Cheol Seong

PY - 2006

Y1 - 2006

N2 - Atomic exchanges across the interface between a HfO2 thin film and strained semiconducting Si1-xGex (x=0.1, 0.2, and 0.3) was investigated by extended x-ray absorption fine structures. Atomic layer deposition of HfO2 films on epitaxial Si1-xGex produces a Hf-silicate (Hf-O-Si bond) phase at the interface. Also O atoms diffuse into the Si1-xGex alloy to form Ge oxide in a segregated phase. This tendency becomes evident when the Ge concentration of the substrate becomes higher or when HfO2 is deposited and these samples are compared to the pure Si1-xGex substrates which have been exposed to ambient atmosphere.

AB - Atomic exchanges across the interface between a HfO2 thin film and strained semiconducting Si1-xGex (x=0.1, 0.2, and 0.3) was investigated by extended x-ray absorption fine structures. Atomic layer deposition of HfO2 films on epitaxial Si1-xGex produces a Hf-silicate (Hf-O-Si bond) phase at the interface. Also O atoms diffuse into the Si1-xGex alloy to form Ge oxide in a segregated phase. This tendency becomes evident when the Ge concentration of the substrate becomes higher or when HfO2 is deposited and these samples are compared to the pure Si1-xGex substrates which have been exposed to ambient atmosphere.

UR - https://www.scopus.com/pages/publications/33749249888

U2 - 10.1063/1.2357341

DO - 10.1063/1.2357341

M3 - Journal article

AN - SCOPUS:33749249888

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132904

ER -

Atomic rearrangements in HfO₂/Si_1-xGe_x interfaces

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