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Auger electron nanoscale mapping and x-ray photoelectron spectroscopy combined with gas cluster ion beam sputtering to study an organic bulk heterojunction

  • Seong Heon Kim
  • , Sung Heo
  • , Soo Ghang Ihn
  • , Sungyoung Yun
  • , Jong Hwan Park
  • , Yeonji Chung
  • , Eunha Lee
  • , Gyeongsu Park
  • , Dong Jin Yun*
  • *Corresponding author for this work
  • Samsung

Research output: Contribution to journalJournal articlepeer-review

Abstract

The lateral and vertical distributions of organic p/n bulk heterojunctions for an organic solar cell device are, respectively, investigated using nanometer-scale Auger electron mapping and using X-ray photoelectron spectroscopy (XPS) with Ar gas cluster ion beam (GCIB) sputtering. The concentration of sulfur, present only in the p-type material, is traced to verify the distribution of p-type (donor) and n-type (acceptor) materials in the blended structure. In the vertical direction, a considerable change in atomic sulfur concentration is observed using XPS depth profiling with Ar GCIB sputtering. In addition, Auger electron mapping of sulfur reveals the lateral 2-dimensional distribution of p- and n-type materials. The combination of Auger electron mapping with Ar GCIB sputtering should thereby allow the construction of 3-dimensional distributions of p- and n-type materials in organic photovoltaic cells.

Original languageEnglish
Article number243303
JournalApplied Physics Letters
Volume104
Issue number24
DOIs
StatePublished - 2014.06.16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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