Avalanche hot source method for separated extraction of parasitic source and drain resistances in single metal-oxide-semiconductor field effect transistors

Separate extraction of source (R_S) and drain (R_D) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of R_S and R_D in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of R_S and R_D. We also confirmed that there is a negligible drift in the threshold voltage (V_T) and the sub threshold slope (SSW) even after application of the method to devices under practical conditions.