Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

Sung Heo; Jae Gwan Chung; Jae Cheol Lee; Taewon Song; Seong Heon Kim; Dong Jin Yun; Hyung Ik Lee; Ki Hong Kim; Gyeong Su Park; Jong Soo Oh; Dong Wook Kwak; Dong Wha Lee; Hoon Young Cho; Dahlang Tahi; Hee Jae Kang; Byoung Deog Choi

doi:10.1002/sia.6024

Band alignment and defect states in amorphous GaInZnO thin films grown on SiO₂/Si substrates

Sung Heo
, Jae Gwan Chung
, Jae Cheol Lee
, Taewon Song
, Seong Heon Kim
, Dong Jin Yun
, Hyung Ik Lee
, Ki Hong Kim
, Gyeong Su Park
, Jong Soo Oh
, Dong Wook Kwak
, Dong Wha Lee
, Hoon Young Cho
, Dahlang Tahi
, Hee Jae Kang
, Byoung Deog Choi^*

^*Corresponding author for this work

Department of Physics

Samsung
Dongguk University
Universitas Hasanuddin
Chungbuk National University
Sungkyunkwan University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

The band alignment and defect states of GaInZnO thin films grown on SiO₂/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect.

Original language	English
Pages (from-to)	1062-1065
Number of pages	4
Journal	Surface and Interface Analysis
Volume	48
Issue number	10
DOIs	https://doi.org/10.1002/sia.6024
State	Published - 2016.10.1

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

defect states
GIZO
PICTS
REELS
TSEE
XPS

Access to Document

10.1002/sia.6024

Cite this

Heo, S., Chung, J. G., Lee, J. C., Song, T., Kim, S. H., Yun, D. J., Lee, H. I., Kim, K. H., Park, G. S., Oh, J. S., Kwak, D. W., Lee, D. W., Cho, H. Y., Tahi, D., Kang, H. J., & Choi, B. D. (2016). Band alignment and defect states in amorphous GaInZnO thin films grown on SiO₂/Si substrates. Surface and Interface Analysis, 48(10), 1062-1065. https://doi.org/10.1002/sia.6024

@article{15a80ace90544a148cd56a515b9de5cb,

title = "Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates",

abstract = "The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect.",

keywords = "defect states, GIZO, PICTS, REELS, TSEE, XPS",

author = "Sung Heo and Chung, \{Jae Gwan\} and Lee, \{Jae Cheol\} and Taewon Song and Kim, \{Seong Heon\} and Yun, \{Dong Jin\} and Lee, \{Hyung Ik\} and Kim, \{Ki Hong\} and Park, \{Gyeong Su\} and Oh, \{Jong Soo\} and Kwak, \{Dong Wook\} and Lee, \{Dong Wha\} and Cho, \{Hoon Young\} and Dahlang Tahi and Kang, \{Hee Jae\} and Choi, \{Byoung Deog\}",

note = "Publisher Copyright: Copyright {\textcopyright} 2016 John Wiley \& Sons, Ltd.",

year = "2016",

month = oct,

day = "1",

doi = "10.1002/sia.6024",

language = "English",

volume = "48",

pages = "1062--1065",

journal = "Surface and Interface Analysis",

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T1 - Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

AU - Heo, Sung

AU - Chung, Jae Gwan

AU - Lee, Jae Cheol

AU - Song, Taewon

AU - Kim, Seong Heon

AU - Yun, Dong Jin

AU - Lee, Hyung Ik

AU - Kim, Ki Hong

AU - Park, Gyeong Su

AU - Oh, Jong Soo

AU - Kwak, Dong Wook

AU - Lee, Dong Wha

AU - Cho, Hoon Young

AU - Tahi, Dahlang

AU - Kang, Hee Jae

AU - Choi, Byoung Deog

PY - 2016/10/1

Y1 - 2016/10/1

N2 - The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect.

AB - The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated exo-electron emission and photo-induced current transient spectroscopy.The band gap via reflection electron energy loss spectroscopy was 3.2 eV. The defect states via photo-induced current transient spectroscopy and thermally stimulated exo-electron emission were at 0.24, 0.53, 1.69 and 2.01 eV below the conduction band minimum of GIZO thin films, respectively. The defect states at 0.24 and 0.53 eV are related to the field-effect mobility, and the defect stated at 1.69 and 2.01 eV is related to the oxygen vacancy defect.

KW - defect states

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KW - TSEE

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