Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

K. W. Park; C. Y. Park; Y. T. Lee

doi:10.1063/1.4739835

Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

K. W. Park^*
, C. Y. Park
, Y. T. Lee

^*Corresponding author for this work

Electronic Materials Engineering

Gwangju Institute of Science and Technology
Samsung

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

Original language	English
Article number	051903
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4739835
State	Published - 2012.07.30

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title = "Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio",

abstract = "Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.",

author = "Park, \{K. W.\} and Park, \{C. Y.\} and Lee, \{Y. T.\}",

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language = "English",

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journal = "Applied Physics Letters",

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T1 - Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

AU - Park, K. W.

AU - Park, C. Y.

AU - Lee, Y. T.

PY - 2012/7/30

Y1 - 2012/7/30

N2 - Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

AB - Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.

UR - https://www.scopus.com/pages/publications/84864682280

U2 - 10.1063/1.4739835

DO - 10.1063/1.4739835

M3 - Journal article

AN - SCOPUS:84864682280

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051903

ER -

Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

Abstract

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