Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

Sung Nam Lee; H. Y. Ryu; H. S. Paek; J. K. Son; Y. J. Sung; K. S. Kim; H. K. Kim; H. Kim; T. Jang; K. H. Ha; O. H. Nam; Y. Park

doi:10.1109/LED.2008.2001081

Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

Sung Nam Lee^*
, H. Y. Ryu
, H. S. Paek
, J. K. Son
, Y. J. Sung
, K. S. Kim
, H. K. Kim
, H. Kim
, T. Jang
, K. H. Ha
, O. H. Nam
, Y. Park

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung
Inha University
Tech University of Korea

Research output: Contribution to journal › Journal article › peer-review

15 Scopus citations

Abstract

InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.

Original language	English
Pages (from-to)	870-872
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1109/LED.2008.2001081
State	Published - 2008.08

Keywords

Gallium compounds
GaN
Laser diode (LD)
Light-emitting diodes (LEDs)
Quantum well (QW)
Semiconductor lasers

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10.1109/LED.2008.2001081

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@article{546e7ff1d10c483185f725b16c4b540b,

title = "Behaviors of emission wavelength shift in AlInGaN-based green laser diodes",

abstract = "InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.",

keywords = "Gallium compounds, GaN, Laser diode (LD), Light-emitting diodes (LEDs), Quantum well (QW), Semiconductor lasers",

author = "Lee, \{Sung Nam\} and Ryu, \{H. Y.\} and Paek, \{H. S.\} and Son, \{J. K.\} and Sung, \{Y. J.\} and Kim, \{K. S.\} and Kim, \{H. K.\} and H. Kim and T. Jang and Ha, \{K. H.\} and Nam, \{O. H.\} and Y. Park",

year = "2008",

month = aug,

doi = "10.1109/LED.2008.2001081",

language = "English",

volume = "29",

pages = "870--872",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "8",

}

TY - JOUR

T1 - Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

AU - Lee, Sung Nam

AU - Ryu, H. Y.

AU - Paek, H. S.

AU - Son, J. K.

AU - Sung, Y. J.

AU - Kim, K. S.

AU - Kim, H. K.

AU - Kim, H.

AU - Jang, T.

AU - Ha, K. H.

AU - Nam, O. H.

AU - Park, Y.

PY - 2008/8

Y1 - 2008/8

N2 - InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.

AB - InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.

KW - Gallium compounds

KW - GaN

KW - Laser diode (LD)

KW - Light-emitting diodes (LEDs)

KW - Quantum well (QW)

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/48749092148

U2 - 10.1109/LED.2008.2001081

DO - 10.1109/LED.2008.2001081

M3 - Journal article

AN - SCOPUS:48749092148

SN - 0741-3106

VL - 29

SP - 870

EP - 872

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

Abstract

Keywords

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